Abstract:
PROBLEM TO BE SOLVED: To increase storage capacities of individual memory elements having different physical characteristics which affect types and volumes of information storable in respective elements. SOLUTION: The method of storing data includes a step in which a writing process 412 writes data into a memory, and a step in which a reading process reads data from the memory. The physical characteristic of the memory cells within the memory supports different data level sets. The writing process takes into account the different data level sets when writing data into the memory while the reading process 414 firstly acquires the data in the memory and sequentially determines how to interpret the data. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a method and system for adaptive endurance coding of non-volatile memories. SOLUTION: Adaptive endurance coding includes a method for storing data that includes receiving write data and a write address. A compression algorithm is applied to the write data to generate compressed data. An endurance code is applied to the compressed data to generate a codeword. The endurance code is selected and applied according to the amount of space saved by applying the compression to the write data. The codeword is written to the write address. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
A method and apparatus for decompressing data in a data-compression system with decoder-only side information is provided. In one aspect, the method comprises generating side information using a source reconstruction and decoding using the generated side information to generate a new source reconstruction. The method further includes iterating the steps of generating and decoding, the generating step using at least the new source reconstruction output by the previous decoding step, and the decoding step using the side information output by the previous generating step. The method may stop the iteration when one or more predetermined criteria are met.
Abstract:
PROBLEM TO BE SOLVED: To provide a system, a method, and a computer program for retrieving data from a memory.SOLUTION: Disclosed is error correction of a NAND flash memory including a system for retrieving data from a memory. This system includes a decoder which communicates with the memory. The decoder is operative to implement a method including receiving a code word stored on a page of the memory, and the code word includes data and a check symbol of a first layer generated in accordance with the data. The method further includes determining that the code word includes an error which cannot be corrected using the check symbol of the first layer, and receives a check symbol of a second layer accordingly. The check symbol of the second layer is generated in accordance with the contents of other pages in the memory written before the page including the code word in response to reception of the data. The code word is corrected in accordance with the check symbol of the second layer. The corrected code word is output.
Abstract:
Discarded memory devices unfit for an original purpose can be reclaimed for reuse for another purpose. The discarded memory devices are tested and evaluated to determine the level of performance degradation therein. A set of an alternate usage and an information encoding scheme to facilitate a reuse of the tested memory device is identified based on the evaluation of the discarded memory device. A memory chip controller may be configured to facilitate usage of reclaimed memory devices by enabling a plurality of encoding schemes therein. Further, a memory device can be configured to facilitate diagnosis of the functionality, and to facilitate usage as a discarded memory unit. Waste due to discarded memory devices can be thereby reduced.
Abstract:
Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The one or more wear metrics are based on measurements of the location. The measurements estimate physical wear of the location. The techniques further include writing the data to the determined location in the nonvolatile memory. The techniques may be performed by methods, apparatus (e.g., a memory controller), and computer program products.
Abstract:
Techniques are presented that include determining, for data to be written to a nonvolatile memory, a location in the nonvolatile memory to which the data should be written based at least on one or more wear metrics corresponding to the location. The one or more wear metrics are based on measurements of the location. The measurements estimate physical wear of the location. The techniques further include writing the data to the determined location in the nonvolatile memory. The techniques may be performed by methods, apparatus (e.g., a memory controller), and computer program products.
Abstract:
Verfahren und eine Vorrichtung zur sicheren Verteilung und Speicherung von Daten unter Verwendung von N Kanälen werden bereitgestellt. Eine Folge von Eingabedaten, X, wird unter Verwendung einer Vielzahl, N, von Kanälen verteilt. In einer Ausführungsform wird die Folge der Eingabedaten, X, in N Teilfolgen aufgeteilt; und die N Teilfolgen werden mittels eines Satzes von Slepian-Wolf-Codes mit N getrennten Codierern und einem gemeinsamen Decodierer in N Bitströme codiert. Die Slepian-Wolf-Codes können so ausgewählt werden, dass sichergestellt ist, dass eine Rechenkomplexität, um einen Teil der Eingabedatenfolge zu erhalten, in Bezug auf eine Länge der Eingabedatenfolge exponentiell zunimmt, sofern nicht alle der N Bitströme preisgegeben werden. In einer anderen Ausführungsform wird die Folge der Eingabedaten, X, mittels eines verlustfreien Datenkomprimierungsverfahrens komprimiert; und die komprimierte Eingabedatenfolge wird in N Teilfolgen aufgeteilt, die verteilt werden.
Abstract:
Solid-state storage management for a system that includes a main board and a solid-state storage board separate from the main board is provided. The sold-state storage board includes a solid-state memory device and solid-state storage devices. The system is configured to perform a method that includes a correspondence being established, by a software module located on the main board, between a first logical address and a first physical address on the solid-state storage devices. The correspondence between the first logical address and the first physical address is stored in a location on the solid-state memory device. The method also includes translating the first logical address into the first physical address. The translating is performed by an address translator module located on the solid-state storage board and is based on the previously established correspondence between the first logical address and the first physical address.
Abstract:
Dynamische Direktzugriffsspeicher- (DRAM-) Einheit (100; 200), aufweisend:ein Matrixfeld (105; 205) auf der DRAM-Einheit zum Speichern von Daten, wobei das Matrixfeld zwei oder mehr Zeilen (110) enthält, wobei jede Zeile zwei oder mehr Speicherzellen aufweist;einen Zeilenversionsspeicher auf der DRAM-Einheit für jede Zeile des Arrays, um einen Zeilenversionswert (112; 212) zu speichern; einen Gruppenversionsdatenspeicher (101; 201) auf der DRAM-Einheit zum Speichern eines Gruppenversionswerts (102; 202);und einen Sicherheitscontroller (220) in der DRAM-Einheit, der konfiguriert ist, auf den Empfang einer Löschanforderung zu antworten, indem der Lesezugriff für alle Zeilen des Matrixfelds der DRAM-Einheit gesperrt wird und der Gruppenversionswert in einen neuen Gruppenversionswert geändert wird, wobei es nicht zulässig ist, einen Gruppenversionswert festzulegen, der im Gruppenversionsdatenspeicher gespeichert ist.