公开(公告)号：WO2012012154A3

公开(公告)日：2012-04-26

申请号：PCT/US2011042289

申请日：2011-06-29

Applicant: IBM ,  KWON OH-JUNG ,  LEE JUNEDONG ,  PARRIES PAUL C ,  SCHEPIS DOMINIC J

Inventor： KWON OH-JUNG ,  LEE JUNEDONG ,  PARRIES PAUL C ,  SCHEPIS DOMINIC J

IPC: H01L21/8242 ,  H01L27/108

CPC classification number: H01L21/2007 ,  G06F17/5068 ,  H01L21/76224 ,  H01L21/7624 ,  H01L21/76251 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/0207 ,  H01L27/10829 ,  H01L27/10861 ,  H01L27/1087 ,  H01L27/1203 ,  H01L28/40 ,  H01L28/90 ,  H01L29/66181

Abstract: A structure and method is provided for fabricating isolated capacitors. The method includes simultaneously forming a plurality of deep trenches and one or more isolation trenches surrounding a group or array of the plurality of deep trenches through a SOI and doped poly layer, to an underlying insulator layer. The method further includes lining the plurality of deep trenches and one or more isolation trenches with an insulator material. The method further includes filling the plurality of deep trenches and one or more isolation trenches with a conductive material on the insulator material. The deep trenches form deep trench capacitors and the one or more isolation trenches form one or more isolation plates that isolate at least one group or array of the deep trench capacitors from another group or array of the deep trench capacitors.

Abstract translation: 提供了用于制造隔离电容器的结构和方法。 该方法包括通过SOI和掺杂多晶层同时形成围绕多个深沟槽的组或阵列的多个深沟槽和一个或多个隔离沟槽至下伏绝缘体层。 该方法还包括用绝缘体材料衬里多个深沟槽和一个或多个隔离沟槽。 该方法还包括在绝缘体材料上用导电材料填充多个深沟槽和一个或多个隔离沟槽。 深沟槽形成深沟槽电容器，并且一个或多个隔离沟槽形成将一个或多个深沟槽电容器的组或阵列与深沟槽电容器的另一组或阵列隔离的一个或多个隔离板。

公开(公告)号：JP2007142401A

公开(公告)日：2007-06-07

申请号：JP2006303404

申请日：2006-11-08

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： DOMINIC J SCHEPIS ,  LEE JUNEDONG ,  DEVENDRA K SADANA ,  SHAHIDI GHAVAM G

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/20 ,  H01L23/52 ,  H01L27/12

CPC classification number: H01L21/84 ,  H01L21/76251 ,  H01L21/823807 ,  H01L21/823878 ,  H01L27/1203 ,  H01L27/1207 ,  H01L29/04

Abstract: PROBLEM TO BE SOLVED: To provide a substrate for semiconductor device including a plurality of semiconductor-on-insulator (SOI) wafers that are coupled with each other in a single stack. SOLUTION: The remote end of this stack includes a first SOI region with a first semiconductor layer of a certain thickness having a first surface orientation. The surface of this single stack can further comprise a non-SOI region or at least a second SOI region, or comprise both of them. This non-SOI region can comprise a bulk silicon extending through all insulator layers of the single stack and having a thickness different from that of a first silicon layer. A second SOI region has a second semiconductor layer having a thickness different from that of the first semiconductor layer or the surface orientation different from the first surface orientation, or both different. Thus, this substrate can permit the formation of different devices on the optimum substrate region with the different surface orientation, the different thickness, the different structure from the bulk or SOI, or the combination of these different ones. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种包括在单个堆叠中彼此耦合的多个绝缘体上半导体（SOI）晶片的半导体器件的衬底。 解决方案：该堆叠的远端包括具有第一表面取向的具有一定厚度的第一半导体层的第一SOI区域。 该单个堆叠的表面可以进一步包括非SOI区域或至少第二SOI区域，或者包括它们两者。 该非SOI区域可以包括延伸穿过单个堆叠的所有绝缘体层并且具有与第一硅层的厚度不同的厚度的体硅。 第二SOI区域具有与第一半导体层的厚度不同的第二半导体层或与第一表面取向不同的表面取向，或者两者不同。 因此，该衬底可以允许在最佳衬底区域上形成不同的器件，其具有不同的表面取向，不同的厚度，与本体或SOI的不同结构，或这些不同的组合。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：GB2495457C

公开(公告)日：2014-10-01

申请号：GB201301679

申请日：2011-06-29

Applicant: IBM

Inventor： KWON OH-JUNG ,  LEE JUNEDONG ,  PAUL PARRIES C ,  DOMINIC SCHEPIS J

IPC: H01L27/108 ,  H01L21/762

公开(公告)号：GB2495457A

公开(公告)日：2013-04-10

申请号：GB201301679

申请日：2011-06-29

Applicant: IBM

Inventor： KWON OH-JUNG ,  LEE JUNEDONG ,  PARRIES PAUL C ,  SCHEPIS DOMINIC J

IPC: H01L27/108 ,  H01L21/762

Abstract: A structure and method is provided for fabricating isolated capacitors. The method includes simultaneously forming a plurality of deep trenches and one or more isolation trenches surrounding a group or array of the plurality of deep trenches through a SOI and doped poly layer, to an underlying insulator layer. The method further includes lining the plurality of deep trenches and one or more isolation trenches with an insulator material. The method further includes filling the plurality of deep trenches and one or more isolation trenches with a conductive material on the insulator material. The deep trenches form deep trench capacitors and the one or more isolation trenches form one or more isolation plates that isolate at least one group or array of the deep trench capacitors from another group or array of the deep trench capacitors.

公开(公告)号：GB2495457B

公开(公告)日：2014-08-20

申请号：GB201301679

申请日：2011-06-29

Applicant: IBM

Inventor： KWON OH-JUNG ,  LEE JUNEDONG ,  PARRIES PAUL C ,  SCHEPIS DOMINIC J

IPC: H01L27/108 ,  H01L21/762

公开(公告)号：DE112011102414T5

公开(公告)日：2013-06-06

申请号：DE112011102414

申请日：2011-06-29

Applicant: IBM

Inventor： KWON OH-JUNG ,  LEE JUNEDONG ,  PARRIES PAUL C ,  SCHEPIS DOMINIC J

IPC: H01L21/84 ,  H01L21/762 ,  H01L21/8242 ,  H01L27/108

Abstract: Es wird eine Struktur und ein Verfahren zur Herstellung isolierter Kondensatoren bereitgestellt. Das Verfahren weist das gleichzeitige Bilden mehrerer tiefer Gräben und eines oder mehrerer Isolationsgräben, welche eine Gruppe oder ein Feld der mehreren tiefen Gräben umgeben, durch eine SOI- und dotierte Polyschicht zu einer darunter liegenden Isolatorschicht auf. Das Verfahren weist ferner das Auskleiden der mehreren tiefen Gräben und des einen oder der mehreren Isolationsgräben mit einem Isolatormaterial auf. Das Verfahren weist ferner das Füllen der mehreren tiefen Gräben und des einen oder der mehreren Isolationsgräben mit einem leitfähigen Material auf dem Isolatormaterial auf. Die tiefen Gräben bilden Tiefgrabenkondensatoren, und der eine oder die mehreren Isolationsgräben bilden eine oder mehrere Isolationsplatten, welche mindestens eine Gruppe oder ein Feld der Tiefgrabenkondensatoren von einer anderen Gruppe oder einem Feld der Tiefgrabenkondensatoren isolieren.