公开(公告)号：SG82045A1

公开(公告)日：2001-07-24

申请号：SG1999006335

申请日：1999-12-10

Applicant: IBM

Inventor： PAUL D AGNELLO ,  LEENA P BUCHWALTER ,  JOHN PATRICK HUMMEL ,  BARBARA J LUTHER ,  ANTHONY K STAMPER

IPC: H01L21/04 ,  H01L21/28 ,  H01L23/522 ,  H01L21/318 ,  H01L21/768 ,  H01L21/316 ,  H01L21/325

Abstract: The present invention utilizes a reducing plasma treatment step to enhance the adhesion of a subsequently deposited inorganic barrier film to a copper wire or via present in a semiconductor interconnect structure such as a dual damascene structure.