公开(公告)号：JP2002180299A

公开(公告)日：2002-06-26

申请号：JP2001323511

申请日：2001-10-22

Applicant: IBM

Inventor： LISA A FANTI ,  JOHN MICHAEL COTT ,  DAVID ELI AIKUSUTATTO

IPC: C23F1/18 ,  C23F1/28 ,  C23F1/34 ,  C23F1/40 ,  C25F3/02 ,  C25F3/14 ,  H01L21/3063 ,  H01L21/3213 ,  H01L21/60 ,  H01L23/485

Abstract: PROBLEM TO BE SOLVED: To subject a substrate containing a metal which is to undergo electroetching and a high Sn solder bumps which do not undergo etching to electroetching. SOLUTION: Electroetching is performed by using a water-based electrochemical etching solution for subjecting metal to etching in the presence of one or several kinds of metals which do not undergo etching. The etching solution contains glyceline having concentration in the range of 1.30 to 1.70 M, a sulfate compound having the concentration of sulfuric ions in the range of 0 to 0.5 M and a phosphate compound having the concentration of phosphoric ions in the range of 0.1 to 0.5 M. In this way, the solder bumps which do not undergo etching are protected and left, and the metal to be etched is removed without leaving residues.

公开(公告)号：JPH11219946A

公开(公告)日：1999-08-10

申请号：JP29818698

申请日：1998-10-20

Applicant: IBM

Inventor： LAWRENCE D DAVID ,  LISA A FANTI

IPC: C23F1/26 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/60

Abstract: PROBLEM TO BE SOLVED: To remove a thin film of a metal layer under the existence of the metal layer to be protected by a method wherein metal layers are subjected to wet chemical etching in the specified range of the pH of an etchant solution. SOLUTION: During the manufacture of a C4 solder bump using an electroplating, a metal blanket stack 3 can be deposited on a functional silicon wafer 2. It is preferable that the stack 3 has a TiW layer 6, a CrCu layer 8 and a Cu layer 8. After an electrodeposition of solder and the removal of a photomask, the stack 3 is removed. The layers 10 and 8 are subjected to electroetching and after that, the thin layer of the layer 6 is left. The layer 6 is etched in a solution containing a hydrogen peroxide, a potassium sulfate and an EDTA potassium. In the range that the pH of the etchant solution is about 2.7 to 4.0, the desired efficiency of the manufacture of a C4 device is obtained and most of defects, which are accompanied by etching of the layer 6, are eliminated.

公开(公告)号：JP2000236001A

公开(公告)日：2000-08-29

申请号：JP2000005442

申请日：2000-01-14

Applicant: IBM

Inventor： JOSEPH A BENENATTI ,  WILLIAM T CHEN ,  LISA A FANTI ,  WAYNE JOHN HOWEL ,  KNICKERBOCKER JOHN U

IPC: H01L21/56 ,  H01L21/60 ,  H05K3/34

Abstract: PROBLEM TO BE SOLVED: To reduce thermo-kinetic fatigue to a minimum in a flip-chip package. SOLUTION: An interposer 400 used for mounting a flip-chip is made of an organic polymer which includes an aperture 33, having a conductive plug 433 and selected in a such way that an optimum length between a substrate and a chip with a coefficient of thermal expansion in matching with the extremum of a thermal cycle temperate of the module component can be obtained. The conductive plug 433 is made of a high-temperature solder 40, provided in an inside of the aperture 33 and a low-temperature solder 45 provided to the outer side of the high-temperature solder 40. Then, a low- temperature solder 45 is subjected to reflow, while the high-temperature solder becomes solid.