公开(公告)号：EP1754253A4

公开(公告)日：2008-10-22

申请号：EP05736453

申请日：2005-04-06

Applicant: IBM

Inventor： GEISS PETER J ,  JOSEPH ALVIN J ,  LIU QZHI ,  ORNER BRADLEY A

IPC: H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/10

CPC classification number: H01L29/0804 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/66287

Abstract: Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector (112), an intrinsic base (118) above the collector, shallow trench isolation regions (114) adjacent the collector, a raised extrinsic base (202) above the intrinsic base, a T-shaped emitter (800) above the extrinsic base, spacers (700) adjacent the emitter, and a silicide (400) layer that is separated from the emitter by the spacers.

公开(公告)号：WO2005104680A3

公开(公告)日：2007-07-05

申请号：PCT/US2005011711

申请日：2005-04-06

Applicant: IBM ,  GEISS PETER J ,  JOSEPH ALVIN J ,  LIU QZHI ,  ORNER BRADLEY A

Inventor： GEISS PETER J ,  JOSEPH ALVIN J ,  LIU QZHI ,  ORNER BRADLEY A

IPC: H01L31/072 ,  H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/10

CPC classification number: H01L29/0804 ,  H01L21/8249 ,  H01L27/0623 ,  H01L29/1004 ,  H01L29/66287

Abstract: Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector (112), an intrinsic base (118) above the collector, shallow trench isolation regions (114) adjacent the collector, a raised extrinsic base (202) above the intrinsic base, a T-shaped emitter (800) above the extrinsic base, spacers (700) adjacent the emitter, and a silicide (400) layer that is separated from the emitter by the spacers.

Abstract translation: 公开了一种双极互补金属氧化物半导体（BiCMOS）或NPN / PNP器件，其具有集电极（112），集电极上方的本征基极（118），与集电极相邻的浅沟槽隔离区域（114），凸起的外部基极 202），在外部基极之上的T形发射极（800），与发射极相邻的间隔物（700）以及通过间隔物与发射极分离的硅化物（400）层。