公开(公告)号：JP2001290258A

公开(公告)日：2001-10-19

申请号：JP2001075579

申请日：2001-03-16

Applicant: IBM

Inventor： LU NING

IPC: G03F1/00 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To provide a structure and a method for performing optical proximity straightening in a photolithography mask. SOLUTION: This structure and method comprises the definition of a hierarchy of internal band which is adjacent to the edge and end in the photolithography mask and exists in the inside thereof, the definition of a hierarchy of external band which is adjacent to the edge and end of the mask structure and exists in the outside thereof, the alteration of transparency of one part of the internal and external bands for the mask structure so as to straighten the optical proximity effect by using transparency alteration which is defined previously, the judgement of whether the alteration of transparency defined previously affects the external band of the mask structure or the plural external bands of other mask structures on the photolithography mask or not and the changing of the alteration of transparency defined previously in such a manner that the said external band and the plural external bands are not affected by the alteration of transparency defined previously. Further, this domain balancing method and algorithm are used in order to determine serif, hole position, shape and size in the alteration of transparency defined previously.

公开(公告)号：WO2012177380A3

公开(公告)日：2013-02-28

申请号：PCT/US2012040849

申请日：2012-06-05

Applicant: IBM ,  THOMPSON ERIC ,  BOOTH JR ROGER A ,  LU NING ,  PUTNAM CHRISTOPHER S

Inventor： THOMPSON ERIC ,  BOOTH JR ROGER A ,  LU NING ,  PUTNAM CHRISTOPHER S

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L23/5223 ,  H01L27/0207 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal capacitor structure includes a plurality of line level structures (15, 16, 25, 26) vertically interconnected with via level structures (31, 32, 33, 34, 41, 42). Each first line level structure (15 or 25) and each second line level structure (16 or 26) includes a set of parallel metal lines (11 or 21, 12 or 22) that is physically joined at an end to a rectangular tab structure (13 or 23, 14 or 24) having a rectangular horizontal cross-sectional area. A first set of parallel metal lines (11 or 21) within a first line level structure (15 or 25) and a second set of parallel metal lines (12 or 22) within a second line level structure (16 or 26) are interdigitated and parallel to each other, and can collectively form an interdigitated uniform pitch structure ((11, 12) or (21, 22)). Because the rectangular tab structures (13 or 23, 14 or 24) do not protrude toward each other within a region between two facing sidewalls of the rectangular tab structures (13 or 23, 14 or 24), sub- resolution assist features (SRAFs) can be employed to provide a uniform width and a uniform pitch throughout the entirety of the interdigitated uniform pitch structure ((11, 12) or (21, 22)).

Abstract translation: 金属电容器结构包括与通孔级结构（31,32,33,34,41,42）垂直互连的多个线路层结构（15,16,25,26）。 每个第一线路层结构（15或25）和每个第二线路层结构（16或26）包括一组平行金属线（11或21,12或22），其在端部处物理地连接到矩形突起结构（ 13或23,14或24）具有矩形水平横截面积。 在第二行级结构（16或26）内的第一行级结构（15或25）和第二组平行金属线（12或22）内的第一组平行金属线（11或21）被交叉指向， 彼此平行，并且可以共同形成叉指均匀间距结构（（11,12）或（21,22））。 因为矩形突片结构（13或23,14或24）在矩形突片结构（13或23,14或24）的两个相对的侧壁之间的区域内不会彼此突出，所以分解辅助特征（SRAF） 可以用于在整个交叉的均匀间距结构（（11,12）或（21,22））的整个上提供均匀的宽度和均匀的间距。

公开(公告)号：GB2505613A

公开(公告)日：2014-03-05

申请号：GB201322254

申请日：2012-06-05

Applicant: IBM

Inventor： THOMPSON ERIC ,  BOOTH JR ROGER ,  LU NING ,  PUTNAM CHRISTOPHER S

IPC: H01L23/528 ,  H01G4/012

Abstract: A metal capacitor structure includes a plurality of line level structures (15, 16, 25, 26) vertically interconnected with via level structures (31, 32, 33, 34, 41, 42). Each first line level structure (15 or 25) and each second line level structure (16 or 26) includes a set of parallel metal lines (11 or 21, 12 or 22) that is physically joined at an end to a rectangular tab structure (13 or 23, 14 or 24) having a rectangular horizontal cross-sectional area. A first set of parallel metal lines (11 or 21) within a first line level structure (15 or 25) and a second set of parallel metal lines (12 or 22) within a second line level structure (16 or 26) are interdigitated and parallel to each other, and can collectively form an interdigitated uniform pitch structure ((11, 12) or (21, 22)). Because the rectangular tab structures (13 or 23, 14 or 24) do not protrude toward each other within a region between two facing sidewalls of the rectangular tab structures (13 or 23, 14 or 24), sub- resolution assist features (SRAFs) can be employed to provide a uniform width and a uniform pitch throughout the entirety of the interdigitated uniform pitch structure ((11, 12) or (21, 22)).

公开(公告)号：DE112012001824T5

公开(公告)日：2014-01-30

申请号：DE112012001824

申请日：2012-06-05

Applicant: IBM

Inventor： THOMPSON ERIC ,  BOOTH JR ROGER A ,  LU NING ,  PUTNAM CHRISTOPHER S

IPC: H01L27/08 ,  H01L21/8242

Abstract: Eine Metallkondensatorstruktur beinhaltet eine Vielzahl von Leitungsebenenstrukturen (15, 16, 25, 26), die vertikal mit Durchkontaktierungsebenenstrukturen (31, 32, 33, 34, 41, 42) verbunden sind. Jede erste Leitungsebenenstruktur (15 oder 25) und jede zweite Leitungsebenenstruktur (16 oder 26) beinhaltet einen Satz paralleler Metallleitungen (11 oder 21, 12 oder 22), der physisch an einem Ende mit einer rechteckigen Laschenstruktur (13 oder 23, 14 oder 24) verbunden ist, die eine rechteckige horizontale Querschnittsfläche aufweist. Ein erster Satz paralleler Metallleitungen (11 oder 21) innerhalb einer ersten Leitungsebenenstruktur (15 oder 25) und ein zweiter Satz paralleler Metallleitungen (12 oder 22) innerhalb einer zweiten Leitungsebenenstruktur (16 oder 26) greifen ineinander und verlaufen parallel zueinander und können gemeinsam eine ineinandergreifende, gleichmäßige Rasterabstandstruktur ((11, 12) oder (21, 22)) ausbilden. Da die rechteckigen Laschenstrukturen (13 oder 23, 14 oder 24) nicht innerhalb eines Bereichs zwischen zwei gegenüberliegenden Seitenwänden der rechteckigen Laschenstrukturen (13 oder 23, 14 oder 24) in Richtung zueinander vorstehen, können nicht auflösbare Hilfsstrukturen (SRAFs) eingesetzt werden, um eine gleichmäßige Breite und einen gleichmäßigen Rasterabstand in der gesamten ineinandergreifenden, gleichmäßigen Rasterabstandstruktur ((11, 12) oder (21, 22)) bereitzustellen.