公开(公告)号：EP2377158A4

公开(公告)日：2014-01-15

申请号：EP09835569

申请日：2009-12-15

Applicant: IBM

Inventor： COLLINS DAVID S ,  RASSEL ROBERT M ,  THOMPSON ERIC

IPC: H01L29/93

CPC classification number: H01L29/93 ,  H01L27/0805 ,  H01L27/0808 ,  H01L29/66181 ,  H01L29/945

公开(公告)号：JP2009038372A

公开(公告)日：2009-02-19

申请号：JP2008189789

申请日：2008-07-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHINTHAKINDI ANIL K ,  THOMPSON ERIC

IPC: H01L21/822 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L27/04

CPC classification number: H01L27/0805 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To prevent an electric field from an anode of the bottommost layer of a multi-layer capacitor from entering a semiconductor substrate. SOLUTION: In a multi-layer capacitor structure, a plurality of conductor carrier layers are formed on a substrate, and each of them has a plurality of interdigitated conductive fingers provided in a dielectric material layer, and each of the plurality of interdigitated conductive fingers on each conductor carrier layer extends in parallel with the side of a square region of the dielectric material layer and includes at least one bend of an angle of 90°. The plurality of interdigitated conductive fingers include the plurality of conductor carrier layers including a first set of fingers connected to an anode terminal and a second set of fingers connected to a cathode terminal, and high dielectric constant material layers formed between the plurality of conductor carrier layers, and only the first set of interdigitated conductive fingers connected to the cathode terminal is provided in the bottommost layer that is in closest proximity to the substrate relative to other layers of the plurality of conductor carrier layers. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了防止多层电容器的最底层的阳极的电场进入半导体衬底。 解决方案：在多层电容器结构中，在基板上形成多个导体载体层，并且它们中的每一个在介电材料层中具有多个交叉指状的导电指状物，并且多个交错的 每个导体载体层上的导电指状物与电介质材料层的正方形区域的平面平行地延伸，并且包括至少一个角度为90°的弯曲部。 多个叉指导电指状物包括多个导体载体层，包括连接到阳极端子的第一组指状物和连接到阴极端子的第二组指状物，以及形成在多个导体载体层之间的高介电常数材料层 并且仅相对于多个导体载体层中的其它层，最靠近衬底的最底层设置与阴极端子连接的第一组交叉指状的导电指状物。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：WO2012177380A3

公开(公告)日：2013-02-28

申请号：PCT/US2012040849

申请日：2012-06-05

Applicant: IBM ,  THOMPSON ERIC ,  BOOTH JR ROGER A ,  LU NING ,  PUTNAM CHRISTOPHER S

Inventor： THOMPSON ERIC ,  BOOTH JR ROGER A ,  LU NING ,  PUTNAM CHRISTOPHER S

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L23/5223 ,  H01L27/0207 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal capacitor structure includes a plurality of line level structures (15, 16, 25, 26) vertically interconnected with via level structures (31, 32, 33, 34, 41, 42). Each first line level structure (15 or 25) and each second line level structure (16 or 26) includes a set of parallel metal lines (11 or 21, 12 or 22) that is physically joined at an end to a rectangular tab structure (13 or 23, 14 or 24) having a rectangular horizontal cross-sectional area. A first set of parallel metal lines (11 or 21) within a first line level structure (15 or 25) and a second set of parallel metal lines (12 or 22) within a second line level structure (16 or 26) are interdigitated and parallel to each other, and can collectively form an interdigitated uniform pitch structure ((11, 12) or (21, 22)). Because the rectangular tab structures (13 or 23, 14 or 24) do not protrude toward each other within a region between two facing sidewalls of the rectangular tab structures (13 or 23, 14 or 24), sub- resolution assist features (SRAFs) can be employed to provide a uniform width and a uniform pitch throughout the entirety of the interdigitated uniform pitch structure ((11, 12) or (21, 22)).

Abstract translation: 金属电容器结构包括与通孔级结构（31,32,33,34,41,42）垂直互连的多个线路层结构（15,16,25,26）。 每个第一线路层结构（15或25）和每个第二线路层结构（16或26）包括一组平行金属线（11或21,12或22），其在端部处物理地连接到矩形突起结构（ 13或23,14或24）具有矩形水平横截面积。 在第二行级结构（16或26）内的第一行级结构（15或25）和第二组平行金属线（12或22）内的第一组平行金属线（11或21）被交叉指向， 彼此平行，并且可以共同形成叉指均匀间距结构（（11,12）或（21,22））。 因为矩形突片结构（13或23,14或24）在矩形突片结构（13或23,14或24）的两个相对的侧壁之间的区域内不会彼此突出，所以分解辅助特征（SRAF） 可以用于在整个交叉的均匀间距结构（（11,12）或（21,22））的整个上提供均匀的宽度和均匀的间距。

公开(公告)号：GB2505613A

公开(公告)日：2014-03-05

申请号：GB201322254

申请日：2012-06-05

Applicant: IBM

Inventor： THOMPSON ERIC ,  BOOTH JR ROGER ,  LU NING ,  PUTNAM CHRISTOPHER S

IPC: H01L23/528 ,  H01G4/012

Abstract: A metal capacitor structure includes a plurality of line level structures (15, 16, 25, 26) vertically interconnected with via level structures (31, 32, 33, 34, 41, 42). Each first line level structure (15 or 25) and each second line level structure (16 or 26) includes a set of parallel metal lines (11 or 21, 12 or 22) that is physically joined at an end to a rectangular tab structure (13 or 23, 14 or 24) having a rectangular horizontal cross-sectional area. A first set of parallel metal lines (11 or 21) within a first line level structure (15 or 25) and a second set of parallel metal lines (12 or 22) within a second line level structure (16 or 26) are interdigitated and parallel to each other, and can collectively form an interdigitated uniform pitch structure ((11, 12) or (21, 22)). Because the rectangular tab structures (13 or 23, 14 or 24) do not protrude toward each other within a region between two facing sidewalls of the rectangular tab structures (13 or 23, 14 or 24), sub- resolution assist features (SRAFs) can be employed to provide a uniform width and a uniform pitch throughout the entirety of the interdigitated uniform pitch structure ((11, 12) or (21, 22)).

公开(公告)号：DE112012001824T5

公开(公告)日：2014-01-30

申请号：DE112012001824

申请日：2012-06-05

Applicant: IBM

Inventor： THOMPSON ERIC ,  BOOTH JR ROGER A ,  LU NING ,  PUTNAM CHRISTOPHER S

IPC: H01L27/08 ,  H01L21/8242

Abstract: Eine Metallkondensatorstruktur beinhaltet eine Vielzahl von Leitungsebenenstrukturen (15, 16, 25, 26), die vertikal mit Durchkontaktierungsebenenstrukturen (31, 32, 33, 34, 41, 42) verbunden sind. Jede erste Leitungsebenenstruktur (15 oder 25) und jede zweite Leitungsebenenstruktur (16 oder 26) beinhaltet einen Satz paralleler Metallleitungen (11 oder 21, 12 oder 22), der physisch an einem Ende mit einer rechteckigen Laschenstruktur (13 oder 23, 14 oder 24) verbunden ist, die eine rechteckige horizontale Querschnittsfläche aufweist. Ein erster Satz paralleler Metallleitungen (11 oder 21) innerhalb einer ersten Leitungsebenenstruktur (15 oder 25) und ein zweiter Satz paralleler Metallleitungen (12 oder 22) innerhalb einer zweiten Leitungsebenenstruktur (16 oder 26) greifen ineinander und verlaufen parallel zueinander und können gemeinsam eine ineinandergreifende, gleichmäßige Rasterabstandstruktur ((11, 12) oder (21, 22)) ausbilden. Da die rechteckigen Laschenstrukturen (13 oder 23, 14 oder 24) nicht innerhalb eines Bereichs zwischen zwei gegenüberliegenden Seitenwänden der rechteckigen Laschenstrukturen (13 oder 23, 14 oder 24) in Richtung zueinander vorstehen, können nicht auflösbare Hilfsstrukturen (SRAFs) eingesetzt werden, um eine gleichmäßige Breite und einen gleichmäßigen Rasterabstand in der gesamten ineinandergreifenden, gleichmäßigen Rasterabstandstruktur ((11, 12) oder (21, 22)) bereitzustellen.