1.
    发明专利
    未知

    公开(公告)号:FR2285737A1

    公开(公告)日:1976-04-16

    申请号:FR7525143

    申请日:1975-08-07

    Applicant: IBM

    Abstract: An over current protect circuit for a common bus driver having a complementary pair FET output includes a pair of AND circuits responsive to the gate-source and drain-source voltages for charging separate time integrating capacitors. If a threshold charge is reached a latch is triggered, which in turn disables the driver via a NAND gate and Inverter, and discharges the active capacitor. The latch is reset by dropping the driver enable line. As an alternative, high driver current may be sensed by placing a resistor in series with each output FET and charging the associated capacitor in response to a high current through the resistor.

    2.
    发明专利
    未知

    公开(公告)号:DE2538453A1

    公开(公告)日:1976-04-01

    申请号:DE2538453

    申请日:1975-08-29

    Applicant: IBM

    Abstract: An over current protect circuit for a common bus driver having a complementary pair FET output includes a pair of AND circuits responsive to the gate-source and drain-source voltages for charging separate time integrating capacitors. If a threshold charge is reached a latch is triggered, which in turn disables the driver via a NAND gate and Inverter, and discharges the active capacitor. The latch is reset by dropping the driver enable line. As an alternative, high driver current may be sensed by placing a resistor in series with each output FET and charging the associated capacitor in response to a high current through the resistor.

    3.
    发明专利
    未知

    公开(公告)号:DE2359646A1

    公开(公告)日:1974-07-04

    申请号:DE2359646

    申请日:1973-11-30

    Applicant: IBM

    Abstract: A bootstrap FET driver amplifier having a precharged relatively higher gate voltage and a relatively lower drain voltage obtained from a common power source. The gate voltage is derived from recurrent pulses produced by an on-chip FET free-running multi-vibrator and a voltage multiplier circuit powered from said power source. The pulse width of the recurrent pulses varies as an inverse function of the transconductance of the on-chip FETs and as a direct function of the threshold voltage of the on-chip FETs. The pulse width controls the charging time of a voltage booster capacitor in the voltage multiplier circuit whereby the amplitude of the boosted voltage is a direct function of the pulse width. The boosted voltage is applied to the gate of the bootstrap FET driver amplifier.

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