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    Semiconductor structure having reduced carrier lifetime
    1.
    发明授权
    Semiconductor structure having reduced carrier lifetime 失效
    具有减少运输寿命的半导体结构

    公开(公告)号：US3728592A

    公开(公告)日：1973-04-17

    申请号：US3728592D

    申请日：1971-09-14

    Applicant: IBM

    Inventor： JOSHI M ,  TSU HSING YEH ,  MASTERS B ,  VIVA O

    IPC: H01L21/00 ,  H01L21/8222 ,  H01L7/44 ,  H01L9/12 ,  H01L19/00

    CPC classification number: H01L21/8222 ,  H01L21/00 ,  Y10S438/904

    Abstract: A method of fabricating high-speed planar transistor structures by reducing carrier lifetime through doping with carrier lifetime killers. Gold is diffused through the front surface of the silicon structure during transistor fabrication. The gold is introduced from the vapor phase in a controlled manner so that its solid solubility in silicon is not exceeded. A simultaneous gold and base diffusion is preferred. Such a simultaneous diffusion produces a novel planar transistor structure having a gold distribution curve with an unexpected increased concentration peak in the region proximate to the basecollector junction.

    Abstract translation: 一种制造高速平面晶体管结构的方法，通过掺杂载流子寿命抑制剂减少载流子寿命。 在晶体管制造期间，金通过硅结构的前表面扩散。 以受控的方式从气相中引入金，使得其在硅中的固溶度不被超过。 同时的金和碱扩散是优选的。

    2.
    发明专利
    未知

    公开(公告)号：BR7504456A

    公开(公告)日：1976-07-06

    申请号：BR7504456

    申请日：1975-07-14

    Applicant: IBM

    Inventor： KOENIG W ,  MAKRIS J ,  MASTERS B

    IPC: H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L21/74

    Abstract: A method of ion implantation into a semiconductor substrate which comprises forming a layer of an electrically insulative material, such as silicon dioxide, on the substrate over the region to be ion implanted. Then, a beam of ions having sufficient energy to pass through the layer of insulative material and to penetrate into the substrate is directed at a particular portion of the insulative layer. Before proceeding further, at least the upper half of the insulative layer, and preferably all of the upper portion of the insulative layer, in excess of a remaining thickness of 100A, is removed by etching. Then, the substrate is heated whereby the ions are driven further into the substrate to form the selected ion implanted region.

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