公开(公告)号：DE3380837D1

公开(公告)日：1989-12-14

申请号：DE3380837

申请日：1983-05-19

Applicant: IBM

Inventor： LECHATON JOHN S ,  MALAVIYA SASHI DHAR ,  SCHEPIS DOMINIC JOSEPH ,  SRINIVASAN GURUMAKONDA RAMASAM

IPC: H01L27/00 ,  H01L21/3065 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763 ,  H01L21/306

Abstract: @ A fully isolated dielectric structure for isolating regions (14) of monocrystalline silicon from one another and method for making such structure are described. The structure uses a combination of recessed oxide isolation (18) with pairs of parallel, anisotropic etched trenches (20) which are subsequently oxidized and filled to give complete dielectric isolation for regions (14) of monocrystalline silicon. The anisotropic etching preferably etches a buried N + sublayer (12) under the monocrystalline silicon region and then the trench structure is thermally oxidized to consume the remaining N+ layer under the monocrystalline region and to fully isolate the monocrystalline silicon region between pairs of such trenches (20).