公开(公告)号：EP1864319A4

公开(公告)日：2009-11-18

申请号：EP06748845

申请日：2006-03-29

Applicant: IBM

Inventor： BELYANSKY MICHAEL P ,  GLUSCHENKOV OLEG ,  LI YING ,  MALLIKARJUNAN ANUPAMA

IPC: H01L21/26

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/7833 ,  H01L29/7843

Abstract: A method for increasing the level of stress for amorphous thin film stressors by means of modifying the internal structure of such stressors is provided. The method includes first forming a first portion of an amorphous film stressor material on at least a surface of a substrate, said first portion having a first state of mechanical strain defining a first stress value. After the forming step, the first portion of the amorphous film stressor material is densified such that the first state of mechanical strain is not substantially altered, while increasing the first stress value. In some embodiments, the steps of forming and densifying are repeated any number of times to obtain a preselected and desired thickness for the stressor.

公开(公告)号：WO2006107669A3

公开(公告)日：2009-04-09

申请号：PCT/US2006011391

申请日：2006-03-29

Applicant: IBM ,  BELYANSKY MICHAEL P ,  GLUSCHENKOV OLEG ,  LI YING ,  MALLIKARJUNAN ANUPAMA

Inventor： BELYANSKY MICHAEL P ,  GLUSCHENKOV OLEG ,  LI YING ,  MALLIKARJUNAN ANUPAMA

IPC: H01L21/26

CPC classification number: H01L21/3185 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/7833 ,  H01L29/7843

Abstract: A method for increasing the level of stress for amorphous thin film stressors by means of modifying the internal structure of such stressors is provided. The method includes first forming a first portion of an amorphous film stressor material (14) on at least a surface of a substrate (12), said first portion (18) having a first state of mechanical strain defining a first stress value. After the forming step, the first portion of the amorphous film stressor material is densified (20) such that the first state of mechanical strain is not substantiaUydtered,\vhile increasing the first stress value. In some embodiments, the steps of forming and densifying are repeated any number of times (20, 2OA, 20B) to obtain a preselected and desired thickness for the stressor.

Abstract translation: 提供了一种通过改变这种压力源的内部结构来提高非晶薄膜应力的应力水平的方法。 该方法包括首先在衬底（12）的至少一个表面上形成非晶膜应力材料（14）的第一部分，所述第一部分（18）具有限定第一应力值的第一机械应变状态。 在成形步骤之后，无定形薄膜应力材料的第一部分被致密化（20），使得机械应变的第一状态没有被证实，即增加第一应力值。 在一些实施例中，形成和致密化的步骤重复任意次数（20,20A，20B），以获得应力源的预选和期望的厚度。