公开(公告)号：JP2001298188A

公开(公告)日：2001-10-26

申请号：JP2001083621

申请日：2001-03-22

Applicant: IBM

Inventor： JEFFREY SCOTT BROWN ,  FURKAY STEPHEN SCOTT ,  GAUTHIER ROBERT J JR ,  MARTIN DALE WARNER ,  SLINKMAN JAMES ALBERT

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/335 ,  H01L21/336 ,  H01L29/10

Abstract: PROBLEM TO BE SOLVED: To provide an FET where an inverse short channel effect is reduced as well as a method for forming it. SOLUTION: Germanium is so implanted over the entire semiconductor substrate at an appropriate intensity and quantity that a peak ion concentration is generated under the source and drain of the FET. The germanium is implanted before the gate, source, and drain are formed, so an inversion short channel effect which is shown with normal FETs is reduced. The short channel effect occurring with the normal FETs is never affected by implantation of germanium.