公开(公告)号：DE68903950T2

公开(公告)日：1993-07-01

申请号：DE68903950

申请日：1989-08-16

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR DIPL PHYS ,  WEISS HELGA ,  WOLTER OLAF DR DIPL PHYS ,  WICKRAMASINGHE DIPL-PHYS DR ,  MARTIN DIPL-PHYS DR

IPC: G01B7/34 ,  G01B21/30 ,  G01N27/00 ,  G01Q10/04 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  H01J37/28 ,  H01L21/00 ,  H01L21/66

Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.

公开(公告)号：DE68903950D1

公开(公告)日：1993-01-28

申请号：DE68903950

申请日：1989-08-16

Applicant: IBM

Inventor： BAYER THOMAS ,  GRESCHNER JOHANN DR DIPL PHYS ,  WEISS HELGA ,  WOLTER OLAF DR DIPL PHYS ,  WICKRAMASINGHE DIPL-PHYS DR ,  MARTIN DIPL-PHYS DR

IPC: G01B7/34 ,  G01B21/30 ,  G01N27/00 ,  G01Q10/04 ,  G01Q60/04 ,  G01Q60/16 ,  G01Q60/38 ,  G01Q70/10 ,  H01J37/28 ,  H01L21/00 ,  H01L21/66

Abstract: A method is described for producing ultrafine silicon tips for the AFM/STM profilometry comprising: 1. providing a silicon substrate and applying a silicon dioxide layer thereto; 2. producing a mask in said silicon dioxide layer by photolithography and wet or dry etching; 3. producing a tip shaft by transferring the mask pattern, produced in step 2, by reactive ion etching into the silicon substrate; 4. thinning the shaft and forming a base by isotropic wet etching; and 5. removing the mask by etching. The resulting tip shaft with a rectangular end may be pointed by argon ion milling. In a second embodiment there is an anisotropic wet etching step, prior to step 5, through the intact silicon dioxide mask, producing a negative profile of the shaft immediately below the mask. After this etching step the mask is removed by etching.