END POINT DETECTING METHOD FOR CHEMICAL MECHANICAL POLISHING

    公开(公告)号:JP2002083793A

    公开(公告)日:2002-03-22

    申请号:JP2001193210

    申请日:2001-06-26

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To provide a method for detecting an end point in chemical mechanical polishing(CMP) of a cloisonne structure. SOLUTION: A nitride layer 31 is stuck on the upper surface of a metal structure 21, at least and a metal oxide layer 22 is stuck on a metal structure 21 and the nitride layer 31. Next, the metal oxide layer 22 is polished using a CMP process while using a slurry, and the nitride layer 31 on the upper surface of the metal structure 21 is exposed. By polishing the nitride layer 31, ammonia is generated inside the slurry. The ammonia is extracted from the slurry as a gas, and according to the concentration of ammonia, a signal is generated. Then, according to the change of the signal, the CMP process is ended. As a suitable execution example, the metal oxide layer 22 is oxidized aluminium, the nitride layer 31 is aluminium nitride, and the nitride layer 31 is stuck on a substrate and the metal structure 21 as a conformal layer.

    Endpoint detection in chemical mechanical polishing

    公开(公告)号:GB2365808A

    公开(公告)日:2002-02-27

    申请号:GB0115775

    申请日:2001-06-28

    Applicant: IBM

    Abstract: An endpoint indicating film 31 is provided between a metal oxide layer 22 overlying a substrate. During chemical mechanical polishing, the endpoint of the process is determined by extracting gaseous reaction product from the slurry (14, fig. 5) arising from a chemical reaction between the slurry (14, fig. 5) and the indicating film 31 and generating a signal in accordance with the concentration of the extracted reaction product, wherein a change in the signal indicates the endpoint. The extracted reaction product may be converted into a different product which emits chemiluminescence which is detected to provide the signal. The metal oxide layer 22 is preferably aluminium oxide, the endpoint indicating film 31 is preferably aluminium nitride and the reaction product ammonia. The method can be used to form a cloisonn’ structure.

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