公开(公告)号：JP2004072089A

公开(公告)日：2004-03-04

申请号：JP2003175593

申请日：2003-06-19

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： LI LEPING ,  CONN WAY ,  SHINWAI WAN ,  STEVEN G BARBY ,  GILHOOLY JAMES ,  SCOTT R CLINE

IPC: B24B37/005 ,  B24B37/013 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3105 ,  B24B37/00 ,  B24B37/04

CPC classification number: B24B37/013 ,  B24B37/0056 ,  H01L21/31053

Abstract: PROBLEM TO BE SOLVED: To provide a device for an endpoint detecting method based on ammonia gas in a proceeding CMP cycle using acid CMP slurry and for a CMP process producing no ammnonia gas, in order to detect the endpoint of chemical mechanical polishing (CMP). SOLUTION: The device comprises constituent elements of (a) a moving means for collecting a sample of acid CMP slurry, (b) a transforming means for transforming the acid CMP slurry to basic slurry, (c) a measuring means for measuring ammonia gas in the acid slurry, and (d) a detecting means for making the notification of the end of the proceeding CMP cycle by using a signal. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002083793A

公开(公告)日：2002-03-22

申请号：JP2001193210

申请日：2001-06-26

Applicant: IBM

Inventor： LI LEPING ,  BARBEE STEVEN GEORGE ,  LEE ERIC JAMES ,  MARTIN FRANCISCO A ,  CONN WAY

IPC: H01L21/302 ,  B24B37/04 ,  B24B49/12 ,  G11B5/31 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a method for detecting an end point in chemical mechanical polishing(CMP) of a cloisonne structure. SOLUTION: A nitride layer 31 is stuck on the upper surface of a metal structure 21, at least and a metal oxide layer 22 is stuck on a metal structure 21 and the nitride layer 31. Next, the metal oxide layer 22 is polished using a CMP process while using a slurry, and the nitride layer 31 on the upper surface of the metal structure 21 is exposed. By polishing the nitride layer 31, ammonia is generated inside the slurry. The ammonia is extracted from the slurry as a gas, and according to the concentration of ammonia, a signal is generated. Then, according to the change of the signal, the CMP process is ended. As a suitable execution example, the metal oxide layer 22 is oxidized aluminium, the nitride layer 31 is aluminium nitride, and the nitride layer 31 is stuck on a substrate and the metal structure 21 as a conformal layer.

公开(公告)号：JP2001044158A

公开(公告)日：2001-02-16

申请号：JP2000179330

申请日：2000-06-15

Applicant: IBM

Inventor： LI LEPING ,  SHINUI WAN

IPC: H01L21/302 ,  B24B37/013 ,  B24B49/16 ,  H01L21/304 ,  B24B37/04

Abstract: PROBLEM TO BE SOLVED: To provide a method and apparatus for detecting the end point of a film removal process for removing a film by a polishing apparatus having a polishing surface coupled to a shaft. SOLUTION: Distortion of a shaft 15 caused by a torque generated by the friction of a polishing surface is detected. The detection is attached by monitoring phase difference between optical signals reflected from two points on the shaft with the use of a sensor 201 mounted on the shaft. Following the shaft deformation, signals are generated. Changes in the signals indicates a change in the torque, thereby indicating the end point of the film removal process. With this arrangement, real-time original position monitoring and control of the process can be realized.

公开(公告)号：DE69709214T2

公开(公告)日：2002-08-22

申请号：DE69709214

申请日：1997-03-05

Applicant: IBM

Inventor： LI LEPING ,  BARBEE STEVEN G ,  HALPERIN ARNOLD

IPC: H01L21/304 ,  B24B37/04 ,  B24B49/02 ,  G01B7/06 ,  G01N27/00 ,  G01R27/00

Abstract: The apparatus for endpoint detection in removal of a film from a semiconductor wafer, comprises a sensor for creating a signal responsive to the film removal process. A positive feedback amplifier is coupled to the sensor, and has a mode selector. An analyser is coupled to the positive feedback amplifier. The sensor comprises a capacitor and an inductor. The mode selector has a device for selecting operation in frequency mode. A filter is coupled between the positive feedback amplifier and the analyser, and comprises a multi-order filter. The analyser comprises a frequency counter. The mode selector comprises a device for selecting operation in automatic amplitude mode, and automatically selects the gain of the positive feedback amplifier and sensor so that an oscillation is produced when the film is removed from the wafer. The gain selector comprises a device for automatically setting a voltage on a varactor.

公开(公告)号：GB2365808A

公开(公告)日：2002-02-27

申请号：GB0115775

申请日：2001-06-28

Applicant: IBM

Inventor： LI LEPING ,  BARBEE STEVEN GEORGE ,  LEE ERIC JAMES ,  MARTIN FRANCISCO A ,  WEI CONG

IPC: H01L21/302 ,  B24B37/04 ,  B24B49/12 ,  G11B5/31 ,  H01L21/304 ,  B24B49/00

Abstract: An endpoint indicating film 31 is provided between a metal oxide layer 22 overlying a substrate. During chemical mechanical polishing, the endpoint of the process is determined by extracting gaseous reaction product from the slurry (14, fig. 5) arising from a chemical reaction between the slurry (14, fig. 5) and the indicating film 31 and generating a signal in accordance with the concentration of the extracted reaction product, wherein a change in the signal indicates the endpoint. The extracted reaction product may be converted into a different product which emits chemiluminescence which is detected to provide the signal. The metal oxide layer 22 is preferably aluminium oxide, the endpoint indicating film 31 is preferably aluminium nitride and the reaction product ammonia. The method can be used to form a cloisonn’ structure.

公开(公告)号：DE69709214D1

公开(公告)日：2002-01-31

申请号：DE69709214

申请日：1997-03-05

Applicant: IBM

Inventor： LI LEPING ,  BARBEE STEVEN G ,  HALPERIN ARNOLD

IPC: H01L21/304 ,  B24B37/04 ,  B24B49/02 ,  G01B7/06 ,  G01N27/00 ,  G01R27/00

Abstract: The apparatus for endpoint detection in removal of a film from a semiconductor wafer, comprises a sensor for creating a signal responsive to the film removal process. A positive feedback amplifier is coupled to the sensor, and has a mode selector. An analyser is coupled to the positive feedback amplifier. The sensor comprises a capacitor and an inductor. The mode selector has a device for selecting operation in frequency mode. A filter is coupled between the positive feedback amplifier and the analyser, and comprises a multi-order filter. The analyser comprises a frequency counter. The mode selector comprises a device for selecting operation in automatic amplitude mode, and automatically selects the gain of the positive feedback amplifier and sensor so that an oscillation is produced when the film is removed from the wafer. The gain selector comprises a device for automatically setting a voltage on a varactor.