公开(公告)号：JP2010140021A

公开(公告)日：2010-06-24

申请号：JP2009256225

申请日：2009-11-09

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： INOUE TADANORI ,  TIAN KEHAN ,  MELVILLE DAVID O ,  MUTA HIDEMASA ,  ROSENBLUTH ALAN E ,  SAKAMOTO MASAHARU

IPC: G03F1/08 ,  H01L21/027

CPC classification number: G03F1/76 ,  G03F1/36

Abstract: PROBLEM TO BE SOLVED: To provide a method for computing manufacturability of a lithographic mask to be used for manufacturing a semiconductor device. SOLUTION: Target edge pairs are selected from the mask layout data of a lithographic mask for computinging a manufacturing penalty as an index indicating the difficulty of manufacturing in making a lithographic mask. The mask layout data includes polygons, and each polygon has a large number of edges. Each target edge pair is defined by two edges of edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs selected. Determining the manufacturability of the lithographic mask uses continuous differentiability of the maufacturability defined on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于计算用于制造半导体器件的光刻掩模的可制造性的方法。

解决方案：从用于计算制造罚款的光刻掩模的掩模布局数据中选择目标边缘对作为指示制造光刻掩模的制造难度的指标。 掩模布局数据包括多边形，并且每个多边形具有大量边缘。 每个目标边对由一个或多个多边形的边缘的两个边缘限定。 确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。 确定制造损失是基于所选择的目标边对。 确定平版印刷掩模的可制造性使用在连续刻度上定义的可制造性的连续可微性。 输出光刻掩模的可制造性。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2013213973A

公开(公告)日：2013-10-17

申请号：JP2012084657

申请日：2012-04-03

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation

Inventor： INOUE TADANORI ,  MELVILLE DAVID O ,  ROSENBLUTH ALAN E ,  SAKAMOTO MASAHARU ,  TIAN KEHAN

IPC: G03F1/70 ,  H01L21/027

CPC classification number: G03F1/70

Abstract: PROBLEM TO BE SOLVED: To provide a mask design method, a program thereof, and a mask design system.SOLUTION: The mask design system according to the present invention includes: an optimization unit 120 having a global mask optimization section 122 and a global light source optimization section 123; and an optical domain simultaneous optimization unit (FDJO) 124. The optimization unit 120 performs a non-linear optimization for an optical domain representation of a mask pattern under a constraint condition that a value of a negative deviation of the object domain representation at a prescribed evaluation point of a restored object domain representation is smaller than a value of a predetermined negative threshold of the evaluation point.

Abstract translation: 要解决的问题：提供掩模设计方法，程序和掩模设计系统。根据本发明的掩模设计系统包括：具有全局掩模优化部分122和全局光的优化单元120 源优化部分123; 和光域同步优化单元（FDJO）124.优化单元120在限制条件下对掩模图案的光域表示执行非线性优化，所述约束条件是目标域表示在规定的负值偏差的值 恢复的对象域表示的评估点小于评估点的预定负阈值的值。

公开(公告)号：JP2010140020A

公开(公告)日：2010-06-24

申请号：JP2009256152

申请日：2009-11-09

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： INOUE TADANORI ,  TIAN KEHAN ,  MELVILLE DAVID O ,  SAKAMOTO MASAHARU ,  MUTA HIDEMASA ,  ROSENBLUTH ALAN E

IPC: G03F1/08 ,  H01L21/027

CPC classification number: G03F1/68 ,  G03F1/78

Abstract: PROBLEM TO BE SOLVED: To provide a method for computing manufacturability of a lithographic mask to be used for fabricating a semiconductor device. SOLUTION: A set of a plurality of target edges is selected from mask layout data of a lithographic mask (402). Then, target edge pairs are selected from the selected set of target edges (404). The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is computed based on the target edge pairs selected (406). The manufacturability of the lithographic mask is output (408). The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于计算用于制造半导体器件的光刻掩模的可制造性的方法。 解决方案：从光刻掩模（402）的掩模布局数据中选择一组多个目标边缘。 然后，从所选择的一组目标边缘中选择目标边缘对（404）。 基于所选择的目标边缘对（406）计算光刻掩模的可制造性，包括制造光刻掩模的制造损失。 输出光刻掩模的可制造性（408）。 光刻掩模的可制造性取决于制造光刻掩模的制造损失。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：DE112011100241T5

公开(公告)日：2012-12-27

申请号：DE112011100241

申请日：2011-03-16

Applicant: IBM

Inventor： MUTA HIDEMASA ,  SAKAMOTO MASAHURA ,  BAGHERI SAEED ,  INOUE TADANOBU ,  MELVILLE DAVID O ,  TIAN KEHAN ,  ROSENBLUTH ALAN E

IPC: G06F17/50

Abstract: Lichtwellendaten für den Entwurf einer Halbleitereinheit werden in Bereiche eingeteilt (102). Für die Wellendaten jedes Bereichs wird eine erste Gestaltung der Wellenfront durchgeführt, wobei nur die Wellendaten jedes Bereichs und nicht die Wellendaten benachbarter Bereiche jedes Bereichs berücksichtigt werden (104). Die Lichtwellendaten jedes Bereichs werden auf der Grundlage der ersten Gestaltung der Wellenfront normalisiert (106). Für die Wellendaten jedes Bereichs wird eine zweite Gestaltung der Wellenfront auf der Grundlage zumindest der normalisierten Wellendaten jedes Bereichs durchgeführt (108). Bei der zweiten Gestaltung der Wellenfront werden die Wellendaten jedes Bereichs und eines Sicherheitsstreifens um jeden Bereich herum berücksichtigt, der die Wellendaten der benachbarten Bereiche jedes Bereichs beinhaltet. Die zweite Gestaltung der Wellenfront kann nacheinander erfolgen, indem die Bereiche in Gruppen aufgeteilt (110) werden und nacheinander die zweite Gestaltung der Wellenfront für die Bereiche jeder Gruppe parallel durchgeführt wird (110).

公开(公告)号：GB2492688A

公开(公告)日：2013-01-09

申请号：GB201217762

申请日：2011-03-16

Applicant: IBM

Inventor： BAGHERI SAEED ,  INOUE TADANOBU ,  MELVILLE DAVID O ,  MUTA HIDEMASA ,  ROSENBLUTH ALAN E ,  SAKAMOTO MASAHURA ,  TIAN KEHAN

IPC: G06F17/50 ,  H01L27/02

Abstract: Optical wave data for a semiconductor device design is divided into regions (102). First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region. The optical wave date of each region is normalized based on the first wavefront engineering (106). Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as normalized (108). The second wavefront engineering takes into account the wave data of each region and a guard band around each region including the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed in parallel by organizing the regions into groups (110).