公开(公告)号：JP2002323773A

公开(公告)日：2002-11-08

申请号：JP2002031631

申请日：2002-02-08

Applicant: IBM

Inventor： MESSICK SCOTT A ,  MOREAU WAYNE M ,  CHRISTOPHER F ROBINSON

IPC: B05D1/02 ,  B05D7/00 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method to develop a photoresist pattern on the substrate of electronic parts such as semiconductor wafers. SOLUTION: A specified developer composition and a specified rinsing liquid composition are successively used to develop an exposed photoresist pattern and to rinse the developed pattern. Both of the developer composition and the rising liquid composition contain anionic surfactants. By successively using the above solutions, a resist pattern with the pattern prevented from deformation can be obtained even when small features of about >3 aspect ratio and