公开(公告)号：JP2001102299A

公开(公告)日：2001-04-13

申请号：JP2000251954

申请日：2000-08-23

Applicant: IBM

Inventor： MICHAEL S GORDON ,  PETRIC PAUL F ,  CHRISTOPHER F ROBINSON

IPC: G03F7/20 ,  H01J37/26 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a technique which is more suitable for real-time evaluation and adjustment. SOLUTION: A lens in a particle beam system can be adjusted speedily, so that the beam is collimated by swiveling the beam on a system axis in a lens back focal plane and cutting off part of the beam with both edge parts of an upper aperture, sweeping the beam on the edge part corresponding to a lower aperture, and displaying beam traces on an oscilloscope at the same time. The beam is collimated, when the knees of both traces match each other through zero-beam deflection.

公开(公告)号：JP2002323773A

公开(公告)日：2002-11-08

申请号：JP2002031631

申请日：2002-02-08

Applicant: IBM

Inventor： MESSICK SCOTT A ,  MOREAU WAYNE M ,  CHRISTOPHER F ROBINSON

IPC: B05D1/02 ,  B05D7/00 ,  G03F7/32 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method to develop a photoresist pattern on the substrate of electronic parts such as semiconductor wafers. SOLUTION: A specified developer composition and a specified rinsing liquid composition are successively used to develop an exposed photoresist pattern and to rinse the developed pattern. Both of the developer composition and the rising liquid composition contain anionic surfactants. By successively using the above solutions, a resist pattern with the pattern prevented from deformation can be obtained even when small features of about >3 aspect ratio and