公开(公告)号：SG85712A1

公开(公告)日：2002-01-15

申请号：SG200003706

申请日：2000-06-28

Applicant: IBM

Inventor： MICHAEL J HARGROVE ,  JACK ALLAN MANDELMAN

IPC: H01L21/28 ,  H01L21/768 ,  H01L23/522 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

Abstract: A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and provides a body contact under each gate conductor segment over the width of the device. A plurality of body contacts may be distributed across the length of the gate conductor. This results in a relatively short path for holes leaving the body to traverse and allows accumulated charge to be removed from the body region under the gate. The structure provides for stable and efficient body-contact operation for SOI MOSFETS of any width operating at high speeds.

公开(公告)号：SG83758A1

公开(公告)日：2001-10-16

申请号：SG1999006260

申请日：1999-12-09

Applicant: IBM

Inventor： MICHAEL J HARGROVE ,  MARIO M PELELLA ,  STEVEN H VOLDMAN

IPC: H01L21/8238 ,  H01L21/336 ,  H01L21/822 ,  H01L23/52 ,  H01L23/58 ,  H01L27/02 ,  H01L27/04 ,  H01L27/092 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L23/60

Abstract: A SOI field effect transistor structure providing ESD protection. The structure has a source, a drain, a body, and a gate. The gate is formed from a thick oxide layer and a metal contact. The gate is formed during the BEOL process. The transistor may be a p-type transistor or an n-type transistor. The transistor may have its drain tied to either the gate, the body, or both the gate and body. When used as a protection device, the drain is tied to a signal pad and the source is tied to a potential reference.