公开(公告)号：DE2041343A1

公开(公告)日：1971-03-18

申请号：DE2041343

申请日：1970-08-20

Applicant: IBM

Inventor： PHILLIP CASTRUCCI PAUL ,  ROGENE GATES HARLAN ,  ATHANASIUS HENLE ROBERT ,  DAVID PRICER WILBUR ,  MICHAEL MORTON ROBERT ,  WESTLEY MASON JOHN ,  DAVID NORTH WILLIAM

IPC: F22B21/06 ,  G11C17/06 ,  G11C17/14 ,  G11C17/16 ,  H01L23/525 ,  H01L27/00 ,  H01L27/102 ,  G11C17/00

Abstract: A read only memory having the capability of being written into once after manufacture. The cells of the memory are capable of being fused or permanently altered by directing a fusing current to the selected cells. The cell is a monolithic semiconductor device comprising a diode to be biased in a forward direction and a diode to be biased in the reverse direction structured so as to form back-to-back diodes. The reverse diode has a lower reverse breakdown voltage than the forward diode, and a metal connection, unconnected to any remaining circuit elements contacts the semiconductor device between diode junctions. The fusing current causes a metal-semiconductor alloy to form and short out the reverse diode.