公开(公告)号：JP2001102299A

公开(公告)日：2001-04-13

申请号：JP2000251954

申请日：2000-08-23

Applicant: IBM

Inventor： MICHAEL S GORDON ,  PETRIC PAUL F ,  CHRISTOPHER F ROBINSON

IPC: G03F7/20 ,  H01J37/26 ,  H01J37/305 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a technique which is more suitable for real-time evaluation and adjustment. SOLUTION: A lens in a particle beam system can be adjusted speedily, so that the beam is collimated by swiveling the beam on a system axis in a lens back focal plane and cutting off part of the beam with both edge parts of an upper aperture, sweeping the beam on the edge part corresponding to a lower aperture, and displaying beam traces on an oscilloscope at the same time. The beam is collimated, when the knees of both traces match each other through zero-beam deflection.

公开(公告)号：JP2000228164A

公开(公告)日：2000-08-15

申请号：JP2000000508

申请日：2000-01-05

Applicant: IBM ,  NIKON CORP

Inventor： MICHAEL S GORDON

IPC: H01J37/141 ,  B23K15/00 ,  H01J37/21 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To electrically adjust the optical axis of a coil by including at least two focus coils arranged around a beam axis in a variable axis focus coil, and by providing at least one of them with a geometrical center displaced from a system axis in a plane perpendicular to the system axis. SOLUTION: A system axis (Z-axis) of a two-axis variable focus coil extends vertically to the paper surface and penetrates all coils arranged around the system axis. That is, each of the coils extends around the system axis, the respective four coils are expressed as circles. The canter of the coils is referred to as a geometrical center and is displaced from the system axis in two planes (an X-Z plane and a Y-Z plane). The magnitude of coil X1-X2 and Y1-Y2 currents can be so set as to position a magnetic axis at any place in an open area (shaded area). Therefore, a displaced variable focus coil can be composed.

公开(公告)号：JP2011185933A

公开(公告)日：2011-09-22

申请号：JP2011047471

申请日：2011-03-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MICHAEL S GORDON ,  KOESTER STEVEN JOHN ,  RODBELL KENNETH P ,  YAU JENG-BANG

IPC: G01T1/24 ,  H01L31/09

CPC classification number: H01L31/119

Abstract: PROBLEM TO BE SOLVED: To provide a method for radiation monitoring that obtains real time information concerning the amount of radiation.
SOLUTION: A semiconductor device includes: a semiconductor substrate; a buried insulator layer disposed on the semiconductor substrate, the buried insulator layer configured to retain an amount of charge in a plurality of charge traps in response to a radiation exposure by the semiconductor device; a semiconductor layer disposed on the buried insulating layer; a second insulator layer disposed on the semiconductor layer; a gate conducting layer disposed on the second insulator layer; and one or more side contacts electrically connected to the semiconductor layer. The method for radiation monitoring includes: applying a backgate voltage to a radiation monitor, the radiation monitor comprising a field effect transistor (FET); exposing the radiation monitor to radiation; determining a change in a threshold voltage of the radiation monitor; and determining an amount of radiation exposure based on the change in threshold voltage.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种获得关于辐射量的实时信息的辐射监测方法。 解决方案：半导体器件包括：半导体衬底; 设置在所述半导体衬底上的掩埋绝缘体层，所述掩埋绝缘体层被配置为响应于所述半导体器件的辐射暴露而将多个电荷量保持在多个电荷阱中; 设置在所述掩埋绝缘层上的半导体层; 设置在所述半导体层上的第二绝缘体层; 设置在所述第二绝缘体层上的栅极导电层; 以及与半导体层电连接的一个或多个侧触点。 用于辐射监测的方法包括：将背栅电压施加到辐射监测器，所述辐射监测器包括场效应晶体管（FET）; 将辐射监测仪暴露于辐射; 确定辐射监测器的阈值电压的变化; 以及基于阈值电压的变化确定辐射暴露量。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2001168026A

公开(公告)日：2001-06-22

申请号：JP2000319983

申请日：2000-10-19

Applicant: IBM

Inventor： MICHAEL S GORDON ,  HARTLEY JOHN G

IPC: G03F1/00 ,  G03F7/20 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an electron beam lithography process which is reduced in line width variation. SOLUTION: This invention relates to the field of electron beam lithography, particularly, to the shaped beam lithography which is used in an integrated circuit manufacturing process to form spots having variable shapes on a photoresist. The electron beam lithography process includes a step of generating an electron beam, and another step of introducing the electron beam through the first square aperture in a first lamina. The first square aperture has a first tooth-shaped edge section. In addition, the electron beam emitted from the first square aperture in the first lamina is focused on the second square lamina in a second lamina having a second tooth-shaped edge section. The formed spot has a quasi-resolution edge area which is formed at least partially by means of the first and second tooth-shaped edge sections.

公开(公告)号：JP2000286193A

公开(公告)日：2000-10-13

申请号：JP2000065056

申请日：2000-03-09

Applicant: IBM

Inventor： MICHAEL S GORDON ,  JAMES D ROCKROLL ,  CHRIS F ROBINSON ,  PETRIC PAUL F

IPC: G03F7/20 ,  H01J37/04 ,  H01J37/147 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and method for aligning charged particle beam in accordance with a curved line variable axis. SOLUTION: A key-hole type silt aperture 150 that has been created in a size for demarcating a desired deflection beam track, such as a planar curved line track and is oriented is provided at each deflector 110 of a charged particle beam system. A beam is statically deflected to the maximum deflection by all the deflectors 110 and in front of a specific slit aperture along the path of the charged particle beam, then scanning is made in a direction in parallel with a direction for crossing the direction of static deflection, at the same time, the current of the charged particle beam captured by the end part of each slit aperture 150 is recorded successively. Based on the recorded, captured beam current, the deflector is aligned or a driver current (or voltage) or both are corrected. A correction sequence is repeated for calibration, deflection/axis correction, beam center alignment, and deflection gain and axis correction parameter adjustment.