公开(公告)号：JP2007185764A

公开(公告)日：2007-07-26

申请号：JP2006347457

申请日：2006-12-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： TALAPIN DMITRI ,  MITZI DAVID B ,  CHRISTOPHER B MURRAY

IPC: B82B3/00 ,  H01L21/336 ,  H01L21/368 ,  H01L27/105 ,  H01L29/786 ,  H01L45/00 ,  H01L49/00

CPC classification number: H01L31/0324 ,  B82Y30/00 ,  H01L21/0237 ,  H01L21/02551 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/03529 ,  H01L31/072 ,  Y02E10/50

Abstract: PROBLEM TO BE SOLVED: To provide an inorganic nanocomposite, an inorganic nanocomposite film, a method for fabricating the above, a method of fabricating a field effect transistor, a data storage medium and a photovoltaic device including the inorganic nanocomposite and inorganic nanocomposite film.
SOLUTION: An inorganic nanocomposite is prepared by: a process of obtaining a solution of a soluble hydrazine-based metal chalcogenide precursor; a process of dispersing a nanoentity in the precursor solution; a process of applying a solution of the precursor containing the nanoentity onto a substrate to produce a film of the precursor containing the nanoentity; and a process of annealing the film of the precursor containing the nanoentity to produce the metal chalcogenide nanocomposite film comprising at least one metal chalcogenide and at least one molecularly-intermixed nanoentity on the substrate. The process can be used to prepare field-effect transistors and photovoltaic devices.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供无机纳米复合材料，无机纳米复合膜，其制造方法，制造场效应晶体管的方法，数据存储介质和包含无机纳米复合材料和无机纳米复合材料的光伏器件 电影。 解决方案：通过以下方法制备无机纳米复合材料：获得可溶性肼基金属硫族化物前体溶液的方法; 将纳米级分散在前体溶液中的方法; 将含有纳米级前体的溶液的溶液施加到基底上以制备含有纳米级的前体的膜的方法; 以及使包含纳米材料的前体的膜退火以制备金属硫族化物纳米复合材料膜的方法，所述金属硫族化物纳米复合材料膜在基材上包含至少一种金属硫族化物和至少一种分子间混合的纳米级。 该过程可用于制备场效应晶体管和光伏器件。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2003309308A

公开(公告)日：2003-10-31

申请号：JP2003062285

申请日：2003-03-07

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： DEHAVEN PATRICK W ,  MEDEIROS DAVID R ,  MITZI DAVID B

IPC: H01L51/05 ,  C23C2/00 ,  H01L21/00 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40

CPC classification number: H01L51/0003 ,  H01L51/0002 ,  H01L51/0025 ,  H01L51/0077 ,  H01L51/0512 ,  Y10T428/1471

Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive organic/inorganic hybrid material for melting processing which can be used for various use, including a light emission layer and a charge transfer layer of a flat panel display, a non-linear light/ photoconductive device, a chemical sensor, and an organic/inorganic light emitting diode, and a channel layer of an organic/inorganic thin film transistor and an organic/inorganic field-effect transistor. SOLUTION: The method, which is for manufacturing the organic/inorganic hybrid material for melting processing and which contains a step for maintaining the solid organic/inorganic hybrid material, at a temperature higher than the melting point of the organic/inorganic hybrid material but lower than its decomposition temperature, for a period of time sufficient to form a uniformly melt article and the step after that which cools down the uniformly melt article at ambient temperature, with sufficient conditions to generate the organic/ inorganic hybrid material for melting processing, is provided. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提供可用于各种用途的廉价有机/无机混合材料用于熔融加工，包括平板显示器的发光层和电荷转移层，非线性光/ 光电导装置，化学传感器和有机/无机发光二极管，以及有机/无机薄膜晶体管和有机/无机场效应晶体管的沟道层。 解决方案：在高于有机/无机混合物的熔点的温度下，制造用于熔融加工的有机/无机混合材料的方法，其含有保持固体有机/无机混合材料的步骤 材料，但低于其分解温度，持续一段时间足以形成均匀熔化的制品，以及随后的步骤，其在环境温度下冷却均匀熔融制品，具有足够的条件以产生用于熔融加工的有机/无机混合材料 ，被提供。 版权所有（C）2004，JPO

公开(公告)号：JP2005051224A

公开(公告)日：2005-02-24

申请号：JP2004203564

申请日：2004-07-09

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MITZI DAVID B

IPC: H01L21/368 ,  C23C18/12 ,  C23C22/02 ,  C30B1/02 ,  H01L21/336 ,  H01L29/786 ,  H01L31/18

CPC classification number: C23C18/1204 ,  H01L21/02568 ,  H01L21/02628 ,  H01L29/66742 ,  H01L29/78681

Abstract: PROBLEM TO BE SOLVED: To provide a method for depositing a metal chalcogenide film. SOLUTION: A method including a step of allowing an isolated hydrazinium-based precursor of a metal chalcogenide to contact a solvent having a soluble additive to form a solution of the complex, a step of applying the solution of the complex onto a substrate to produce a coating of the solution on the substrate, a step of removing the solvent from the coating to produce a film of the complex on the substrate, and a step of thereafter annealing the film of the complex to produce a metal chalcogenide film on the substrate, is provided. A method for preparing an isolated hydrazinium-based precursor of a metal chalcogenide as well as a thin film field effect transistor device using the metal chalcogenide as a channel layer is also provided. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 待解决的问题：提供一种沉积金属硫族化物膜的方法。 解决方案：一种方法，包括使金属硫族化物的分离的肼基前体与具有可溶性添加剂的溶剂接触以形成络合物的溶液的步骤，将复合物溶液施加到基底上的步骤 在所述基板上制造所述溶液的涂层，从所述涂层去除所述溶剂以在所述基板上产生所述复合物的膜的步骤，以及之后对所述配合物的膜进行退火以在所述基板上产生金属硫族化物膜的步骤 衬底。 还提供了制备金属硫族化物的分离的肼鎓前体的方法以及使用金属硫族化物作为通道层的薄膜场效应晶体管器件。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：BR0004230A

公开(公告)日：2001-04-10

申请号：BR0004230

申请日：2000-09-15

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  MITZI DAVID B

IPC: H01L51/50 ,  C09K11/06 ,  H01L51/30 ,  C09B67/54 ,  C09B69/04

Abstract: PURPOSE: To provide an organic light emitting diode(OLED) having high operational stability and durability. CONSTITUTION: In the present invention, a neutral dyestuff molecule (D) is converted to an ionic salt (DA+X-DA-X+), and then used as a luminous layer or charge transfer layer in OLED. This is realized by combining an ionezable substituent (A) with dyestuff molecule in the first synthesizing step, and then reacting it with a suitable reagent including ion (X) which balances the electric charge. The ionic compound can be attached as amorphous film using a conventional vapor deposition technique. In addition, these are thermally stable against crystallization. The OLED device in which the light emitting layer is made of such a dyestuff salt has higher efficiency and durability compared with a device using a neutral dyestuff molecule.

公开(公告)号：DE112012001058T5

公开(公告)日：2013-12-05

申请号：DE112012001058

申请日：2012-01-26

Applicant: IBM

Inventor： GUNAWAN OKI ,  MITZI DAVID B ,  SADANA DEVENDRA K ,  KIM JEEHWAN ,  DOROV TEODOR K

IPC: H01L31/0256

Abstract: Eine photosensitive Einheit und ein Verfahren umfassen eine obere Zelle (102), welche eine n-leitende Schicht, eine p-leitende Schicht und dazwischen eine obere eigenleitende Schicht aufweist. Eine untere Zelle (104) weist eine n-leitende Schicht, eine p-leitende Schicht und dazwischen eine untere eigenleitende Schicht auf. Die untere eigenleitende Schicht weist ein Cu-Zn-Sn-haltiges Chalkogenid (116) auf.

公开(公告)号：DE112012001058B4

公开(公告)日：2019-08-29

申请号：DE112012001058

申请日：2012-01-26

Applicant: IBM

Inventor： GUNAWAN OKI ,  KIM JEEHWAN ,  MITZI DAVID B ,  SADANA DEVENDRA K ,  DOROV TEODOR K

IPC: H01L31/18 ,  H01L31/0725 ,  H01L31/0749

Abstract: Verfahren zur Herstellung einer Tandem-Photovoltaikeinheit, aufweisend:Bilden einer unteren Zelle (104) auf einem Substrat (122), wobei die untere Zelle (104) eine n-leitende Schicht (114), eine p-leitende Schicht (120) und dazwischen eine untere eigenleitende Schicht (116) aufweist, wobei die p-leitende Schicht (120) derart bereitgestellt wird, dass sie als eine Molybdän-Schicht ausgebildet ist und wobei die Dicke dieser Molybdän-Schicht größer als die Dicke der n-leitenden Schicht (114) ist,Anwenden von Wasserstoffplasma auf der n-leitenden Schicht (114) zur Erhöhung der Kristallinität einer auf der n-leitenden Schicht (114) anwachsenden p-leitenden Schicht (112) einer oberen Zelle (102),Bilden einer oberen Zelle (102) über der unteren Zelle (104), um eine Tandemzelle (100) zu bilden, wobei die obere Zelle (102) eine n-leitende Schicht (106), eine p-leitende Schicht (112) und dazwischen eine obere eigenleitende Schicht (110) aufweist, undBilden einer transparenten Elektrode (108) auf der n-leitenden Schicht (106) der oberen Zelle (102),wobei die untere eigenleitende Schicht (116) eine Cu-Zn-Sn-haltige Chalkogenidverbindung aufweist mit einer Kesteritstruktur der Formel CuZnSn(SSe), wobei 0 ≤ x ≤ 1; 0 ≤ y ≤ 1; 0 ≤ z ≤ 1; -1 ≤ q ≤ 1, wobei z so gesteuert wird, dass eine Bandlücke der unteren Zelle (104) so eingestellt wird, dass sie kleiner als eine Bandlücke der oberen Zelle (102) ist und wobei die Dicke der eigenleitenden Schicht (116) zwischen 0,2 und 4,0 µm liegt.

公开(公告)号：GB2356738B

公开(公告)日：2004-03-17

申请号：GB0018081

申请日：2000-07-25

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  MITZI DAVID B

IPC: H01L51/50 ,  C09K11/06 ,  H01L51/30 ,  H01L51/20 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14

Abstract: PURPOSE: To provide an organic light emitting diode(OLED) having high operational stability and durability. CONSTITUTION: In the present invention, a neutral dyestuff molecule (D) is converted to an ionic salt (DA+X-DA-X+), and then used as a luminous layer or charge transfer layer in OLED. This is realized by combining an ionezable substituent (A) with dyestuff molecule in the first synthesizing step, and then reacting it with a suitable reagent including ion (X) which balances the electric charge. The ionic compound can be attached as amorphous film using a conventional vapor deposition technique. In addition, these are thermally stable against crystallization. The OLED device in which the light emitting layer is made of such a dyestuff salt has higher efficiency and durability compared with a device using a neutral dyestuff molecule.

公开(公告)号：GB2356738A

公开(公告)日：2001-05-30

申请号：GB0018081

申请日：2000-07-25

Applicant: IBM

Inventor： CHONDROUDIS KONSTANTINOS ,  MITZI DAVID B

IPC: H01L51/50 ,  C09K11/06 ,  H01L51/30 ,  H01L51/20 ,  H05B33/02 ,  H05B33/12 ,  H05B33/14

Abstract: PURPOSE: To provide an organic light emitting diode(OLED) having high operational stability and durability. CONSTITUTION: In the present invention, a neutral dyestuff molecule (D) is converted to an ionic salt (DA+X-DA-X+), and then used as a luminous layer or charge transfer layer in OLED. This is realized by combining an ionezable substituent (A) with dyestuff molecule in the first synthesizing step, and then reacting it with a suitable reagent including ion (X) which balances the electric charge. The ionic compound can be attached as amorphous film using a conventional vapor deposition technique. In addition, these are thermally stable against crystallization. The OLED device in which the light emitting layer is made of such a dyestuff salt has higher efficiency and durability compared with a device using a neutral dyestuff molecule.