公开(公告)号：DE3879527D1

公开(公告)日：1993-04-29

申请号：DE3879527

申请日：1988-01-19

Applicant: IBM

Inventor： EGITTO FRANK DANIEL ,  MLYNKO WALTER EUGENE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H05K3/00 ,  H01L21/31

Abstract: Increased etching rates are obtained by plasma etching wherein the power is applied in a cyclical or oscillating mode.

公开(公告)号：DE3676107D1

公开(公告)日：1991-01-24

申请号：DE3676107

申请日：1986-03-19

Applicant: IBM

Inventor： BABU SURYADEVARA VIJAYAKUMAR ,  HOFFARTH JOSEPH GERARD ,  KNOLL ALLAN ROBERT ,  MLYNKO WALTER EUGENE ,  REMBETSKI JOHN FRANCIS

IPC: H01L21/302 ,  C09K13/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  C23F1/12 ,  B44C1/22 ,  C23C4/04

公开(公告)号：DE3879527T2

公开(公告)日：1993-09-30

申请号：DE3879527

申请日：1988-01-19

Applicant: IBM

Inventor： EGITTO FRANK DANIEL ,  MLYNKO WALTER EUGENE

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H05K3/00 ,  H01L21/31

Abstract: Increased etching rates are obtained by plasma etching wherein the power is applied in a cyclical or oscillating mode.

公开(公告)号：DE3779169D1

公开(公告)日：1992-06-25

申请号：DE3779169

申请日：1987-03-13

Applicant: IBM

Inventor： EGITTO FRANK DANIEL ,  EMMI FRANCIS ,  MLYNKO WALTER EUGENE ,  SUSKO ROBIN ANNE

IPC: B08B3/08 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H05K3/00 ,  H05K3/08 ,  H05K3/26 ,  H05K3/42

Abstract: Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.