1.
    发明专利
    未知

    公开(公告)号:DE3779169D1

    公开(公告)日:1992-06-25

    申请号:DE3779169

    申请日:1987-03-13

    Applicant: IBM

    Abstract: Contaminant is removed from holes by etching in a gaseous plasma by first removing contaminant from the vicinity of the edges of the hole. Next, a mask is provided in the vicinity of the edges to prevent etching by contacting with a gaseous plasma which is different from the gaseous plasma employed in the first etching step. The holes are then etched in a gaseous plasma to remove contaminant from the interior of the holes in the vicinity of the center of the holes, whereby the mask protects the edges from being etched.

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