Abstract:
A method for measuring an integrated circuit (IC) structure (12) by measuring an imprint (30) of the structure, a method for preparing a test site (26) for the above measuring, and IC (10) so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint (30) of the removed bottom surface of the structure in a top surface (32) of the substrate. The imprint can then be imaged using an atomic force microscope (AFM) (40). The image (50) can be used to measure the bottom surface of the structure.
Abstract:
A method of detecting local mechanical stress in integrated devices is provided, the method comprising: enabling the detection of a photo voltage difference between a scan probe device (14) and a surface portion (30) of an integrated device (18), the scan probe device (14) being configured to deflect in response to the photo voltage difference; measuring the deflection of the scan probe device (14) in response to the photo voltage difference between the scan probe device (14) and the surface portion (30) of the integrated device (18); and calculating a local stress level within the integrated device by determining a local work function of the surface portion (30) of the integrated device (18) based upon the deflection of the scan probe device (14).
Abstract:
A method for measuring an integrated circuit (IC) structure (12) by measuring an imprint (30) of the structure, a method for preparing a test site (26) for the above measuring, and IC (10) so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint (30) of the removed bottom surface of the structure in a top surface (32) of the substrate. The imprint can then be imaged using an atomic force microscope (AFM) (40). The image (50) can be used to measure the bottom surface of the structure.
Abstract:
A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.
Abstract:
A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.