公开(公告)号：US3916036A

公开(公告)日：1975-10-28

申请号：US50959574

申请日：1974-09-26

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M ,  NEED III OMAR U

IPC: G03F7/039 ,  B05D3/06

CPC classification number: G03F7/039 ,  Y10S430/126 ,  Y10S430/143

Abstract: Polysulfone resists are made more sensitive to decomposition by electron beam radiation and also made sensitive to radiation of light in the 3,000 to 5,000 A region by the addition of sensitizers which are either energy transfer agents or sources of free radicals.

公开(公告)号：DE2535423A1

公开(公告)日：1976-04-15

申请号：DE2535423

申请日：1975-08-08

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: G03F7/039 ,  G03F7/38 ,  G03C5/00 ,  G03F7/10

Abstract: The prodn. of an image from a radiation-sensitive, thermostable, positive resist with high resolving power comprises (a) applying a polycarbonate film to a substrate; (b) exposing the film selectively; and (c) removing the degradation prods. from the exposed areas with a solvent. Exposure pref. is carried out with a low energy electron beam with an acceleration potential of 10-30 keV and a charge density of 3 x 10-6 to 1 C/cm2. A thin metal film can be deposited on the polycarbonate film after exposure and before development with the solvent. Used esp. in the prodn. of microcircuits of high density. Electron-sensitive resist materials are used which are stable up to 400 degrees C and give esp. good results in the metal lift-off process.

公开(公告)号：DE69430964D1

公开(公告)日：2002-08-22

申请号：DE69430964

申请日：1994-01-11

Applicant: IBM

Inventor： GURNEY BRUCE ALVIN ,  HEIM DAVID EUGENE ,  LEFAKIS HARALAMBOS ,  NEED III OMAR U ,  SPERIOSU VIRGIL SIMON ,  WILHOIT DENNIS RICHARD

IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  G01R33/06

Abstract: A magnetoresistive read sensor based on the spin valve effect is described, in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with at least one of the ferromagnetic layers (referred to as a filter layer) to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer. The magnetization of the filter layer is free to rotate in response to an applied magnetic field thereby effectively varying the electrically resistance to conduction electrons in the back/filter layer. The thickness of the back layer is selected to optimize the sensor parameters being measured and is in a range of about 4.0A to 1000A.

公开(公告)号：DE2553519A1

公开(公告)日：1976-07-01

申请号：DE2553519

申请日：1975-11-28

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: G03F7/16 ,  G03C1/74 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  H05K3/00 ,  G03F7/10

Abstract: Very sensitive electron beam positive resists have been obtained using films of nitrocellulose containing 10.5 to 12% nitrogen.

公开(公告)号：DE69430964T2

公开(公告)日：2003-02-13

申请号：DE69430964

申请日：1994-01-11

Applicant: IBM

Inventor： GURNEY BRUCE ALVIN ,  HEIM DAVID EUGENE ,  LEFAKIS HARALAMBOS ,  NEED III OMAR U ,  SPERIOSU VIRGIL SIMON ,  WILHOIT DENNIS RICHARD

IPC: G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  G01R33/06

Abstract: A magnetoresistive read sensor based on the spin valve effect is described, in which a component of the read element resistance varies as the cosine of the angle between the magnetization directions in two adjacent magnetic layers. The sensor read element includes two adjacent ferromagnetic layers separated by a nonmagnetic metallic layer. A layer of nonmagnetic electrically conductive material is deposited adjacent to and in contact with at least one of the ferromagnetic layers (referred to as a filter layer) to form a back or conduction layer which provides a low resistance path for conduction electrons transmitted through the adjacent filter layer. The thickness of the filter layer is selected such that it effectively blocks conduction electrons having spins antiparallel to the direction of magnetization in the filter layer while allowing conduction electrons with parallel spins to be transmitted through the layer into the adjacent back layer. The magnetization of the filter layer is free to rotate in response to an applied magnetic field thereby effectively varying the electrically resistance to conduction electrons in the back/filter layer. The thickness of the back layer is selected to optimize the sensor parameters being measured and is in a range of about 4.0A to 1000A.

公开(公告)号：DE2536299A1

公开(公告)日：1976-04-08

申请号：DE2536299

申请日：1975-08-14

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10 ,  G03F1/00

公开(公告)号：DE2602825A1

公开(公告)日：1976-08-05

申请号：DE2602825

申请日：1976-01-27

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  NEED III OMAR U ,  MOREAU WAYNE MARTIN

IPC: H01L21/027 ,  B41C1/00 ,  C08J3/28 ,  G03F7/039 ,  G03F7/10

Abstract: 1515330 Electron sensitive polymers INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1975 [29 Jan 1975] 49960/75 Heading G2C Positive resist masks are formed by exposing a supported film of a non-crosslinked polymeric material to electron beam radiation in a predetermined pattern so as to degrade the polymeric material in the exposed areas, and removing the degraded products in the exposed areas. The polymeric material used is selected from (1) polyalkyl methacrylates and copolymers of alkyl methacrylates with halogen - or cyano - containing monomers and (2) post halogenated derivatives of the polymers in (1). The coated polymers may be baked prior to exposure and also after development.

公开(公告)号：DE2552582A1

公开(公告)日：1976-07-01

申请号：DE2552582

申请日：1975-11-24

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.

公开(公告)号：DE2536300A1

公开(公告)日：1976-04-08

申请号：DE2536300

申请日：1975-08-14

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: G03F7/039 ,  G03F7/10 ,  G03F1/00

Abstract: 1500403 Sensitized olefin-sulphone polymers INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [26 Sept 1974] 21838/75 Addition to 1421805 Heading G2C A radiation sensitive positive resist comprises an olefin-sulphone polymer sensitized by a charge transfer agent or a free radical source. The polymer is preferably poly (hexene-1-sulphone) and sensitizers include azulene, 2, 4, 7-trinitrofluorenone, fluorene, diphenylamine, p-nitroaniline, CCl4, CBr4, Cl4, phenyl disulphide, azobenzene, and poly(alpha-chloromethylacrylate). The resist is degraded on exposure to U.V., visible light, x-rays, gamma radiation and low energy electron beams of from 10 to 30 KeV. The exposed areas of the polymer are removed using a solvent such as 1,4- dichlorobutane.