公开(公告)号：DE3166342D1

公开(公告)日：1984-10-31

申请号：DE3166342

申请日：1981-10-05

Applicant: IBM

Inventor： KOTECHA HARISH NARANDAS ,  NOBLE JR ,  WIEDMAN III FRANCIS WALTER

IPC: H01L27/112 ,  G11C16/04 ,  G11C17/00 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34

公开(公告)号：DE3686132D1

公开(公告)日：1992-08-27

申请号：DE3686132

申请日：1986-10-07

Applicant: IBM

Inventor： NOBLE JR ,  SCHEUERLEIN ROY EDWIN ,  WALKER WILLIAM WARREN

IPC: H01L21/76 ,  H01L21/033 ,  H01L21/265 ,  H01L21/762 ,  H01L27/10 ,  H01L27/105 ,  H01L21/00

Abstract: A process is provided for making two self-aligned recessed oxide isolation regions (24, 28) of different thicknesses which includes the steps of defining first and second spaced apart regions (16, 18) on the surface of a semiconductor substrate (10), forming a protective layer (20) over the second region (18), forming a first insulating layer (24) of a given thickness within the first region (16) while the second region is protected by the protective layer, removing the protective layer (20) from the second region and forming a second insulating layer (28) thinner than that of the first layer (24) within the second region. Field regions (22, 26) may be ion implanted prior to forming the insulating layers.