公开(公告)号：DE3166342D1

公开(公告)日：1984-10-31

申请号：DE3166342

申请日：1981-10-05

Applicant: IBM

Inventor： KOTECHA HARISH NARANDAS ,  NOBLE JR ,  WIEDMAN III FRANCIS WALTER

IPC: H01L27/112 ,  G11C16/04 ,  G11C17/00 ,  H01L21/336 ,  H01L21/8246 ,  H01L21/8247 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34

公开(公告)号：DE2860591D1

公开(公告)日：1981-04-23

申请号：DE2860591

申请日：1978-12-01

Applicant: IBM

Inventor： BHATTACHARYYA ARUP ,  WIEDMAN III FRANCIS WALTER

IPC: H01L29/73 ,  G11C11/404 ,  H01L21/225 ,  H01L21/285 ,  H01L21/331 ,  H01L21/74 ,  H01L21/8222 ,  H01L21/8229 ,  H01L27/07 ,  H01L27/102 ,  H01L21/70

Abstract: A semiconductor structure, formed within a recessed oxide isolation region, includes a semiconductor substrate of a first conductivity type within which a collector of opposite conductivity type is formed below the surface of the substrate and extending in part to the surface of the substrate for ease of contact. A first layer of doped polycrystalline silicon or polysilicon is formed on a first portion of the surface of the substrate and in electrical contact with the substrate which acts as the base of a transistor. The first polysilicon layer is oxidized to form an outer insulating layer thereover. A second doped polysilicon layer is disposed over the outer insulating layer onto a second portion of the surface of the substrate so as to be spaced from the first portion by only the thickness of the outer insulating layer on the first polysilicon layer. The dopant in the second polysilicon layer is driven into the surface of the semiconductor substrate to form an emitter therein. Means, which may include a portion of the second polysilicon layer, are provided for electrically contacting the collector to thus form a completed compact bipolar transistor which has very high performance.