1.
    发明专利
    未知

    公开(公告)号:DE3888512T2

    公开(公告)日:1994-10-06

    申请号:DE3888512

    申请日:1988-12-13

    Applicant: IBM

    Abstract: An apparatus for monitoring the conductivity of a semiconductor wafer (2) during the course of a polishing process is disclosed. A polishing pad (22) that contacts the wafer has an active electrode (26) and at least one passive electrode (28), both of which are embedded in the polishing pad. A detecting device (34, 36, 38, 40, 41) is connected to the active and passive electrodes for monitoring the current between the electrodes as the wafer is lapped by the polishing pad. The etch endpoint of the wafer is determined as a function of the magnitude of the current flow.

    4.
    发明专利
    未知

    公开(公告)号:DE69116227D1

    公开(公告)日:1996-02-22

    申请号:DE69116227

    申请日:1991-04-13

    Applicant: IBM

    Abstract: The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary coil (48) having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil (48) to provide a magnetic flux in the air gap (66,68,70,72). A second coil (46) is mounted for rotation on the polishing table (26), in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts (42) which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate which is being polished and provide a load on the second or rotating coil. The rotating coil, when it is in the air gap (66,68,70,72) of the stationary coil, will perturb the flux field therein as a function of the resistance of the load caused by the contacts (42) contacting either a conducting surface or a non-conducting surface. This perturbance of the flux field is measured as a change in the induced voltage in the stationary coil which in turn is converted to a signal which is processed to indicate the end point of polishing, the end point being when a metallic layer has been removed to expose a dielectric layer therebeneath or, conversely, when a dielectric layer has been removed to expose a metallic layer therebeneath.

    7.
    发明专利
    未知

    公开(公告)号:DE69116227T2

    公开(公告)日:1996-07-04

    申请号:DE69116227

    申请日:1991-04-13

    Applicant: IBM

    Abstract: The present invention relates to a method and apparatus for remotely detecting impedance. It is specifically adapted for use on a polishing machine wherein the end point of polishing for removing a surface layer during the processing of semiconductor substrates is detected. A first, or stationary coil (48) having a high permeability core is wound having an air gap and an AC voltage is applied to the stationary coil (48) to provide a magnetic flux in the air gap (66,68,70,72). A second coil (46) is mounted for rotation on the polishing table (26), in a position to periodically pass through the air gap of the stationary coil as the table rotates. The second coil is connected at its opposite ends to contacts (42) which are embedded in the surface of the polishing wheel. The contacts are positioned to engage the surface of the substrate which is being polished and provide a load on the second or rotating coil. The rotating coil, when it is in the air gap (66,68,70,72) of the stationary coil, will perturb the flux field therein as a function of the resistance of the load caused by the contacts (42) contacting either a conducting surface or a non-conducting surface. This perturbance of the flux field is measured as a change in the induced voltage in the stationary coil which in turn is converted to a signal which is processed to indicate the end point of polishing, the end point being when a metallic layer has been removed to expose a dielectric layer therebeneath or, conversely, when a dielectric layer has been removed to expose a metallic layer therebeneath.

    9.
    发明专利
    未知

    公开(公告)号:DE3888512D1

    公开(公告)日:1994-04-21

    申请号:DE3888512

    申请日:1988-12-13

    Applicant: IBM

    Abstract: An apparatus for monitoring the conductivity of a semiconductor wafer (2) during the course of a polishing process is disclosed. A polishing pad (22) that contacts the wafer has an active electrode (26) and at least one passive electrode (28), both of which are embedded in the polishing pad. A detecting device (34, 36, 38, 40, 41) is connected to the active and passive electrodes for monitoring the current between the electrodes as the wafer is lapped by the polishing pad. The etch endpoint of the wafer is determined as a function of the magnitude of the current flow.

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