公开(公告)号：JP2001308345A

公开(公告)日：2001-11-02

申请号：JP2001090670

申请日：2001-03-27

Applicant: IBM

Inventor： PAUL STEVEN ANDREE ,  COLGAN EVAN GEORGE ,  JOHN C FLAKE ,  PETER FRYER ,  WILLIAM GRAHAM ,  EUGENE O'SULLIVAN

IPC: H01L21/28 ,  H01L21/225 ,  H01L21/336 ,  H01L29/417 ,  H01L29/45 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for simplifying formation of an ohmic contact for a thin film transistor. SOLUTION: The method for forming an ohmic contact for a semiconductor device includes a step of forming a metal-contained layer containing integrally formed dopants. The metal-contained layer is patterned to form a constituent element of the semiconductor device, and a semiconductor layer is deposited in contact with the metal-contained layer. The semiconductor device is annealed so that dopants are outwardly diffused from the metal-contained layer within the semiconductor layer to thereby form an ohmic contact.

公开(公告)号：JP2003218498A

公开(公告)日：2003-07-31

申请号：JP2002290197

申请日：2002-10-02

Applicant: IBM

Inventor： PAUL S ANDREE ,  JOHN C FLAKE ,  MICHEL BRUNO ,  TSUJIMURA TAKATOSHI

IPC: G02F1/1343 ,  G09F9/00 ,  H01L21/02 ,  H01L21/28 ,  H01L21/288 ,  H01L21/768 ,  H01L51/50 ,  H05K3/18 ,  H05K3/38 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To provide a method of forming pattern, a semiconductor device and a metal conductive pattern. SOLUTION: A method of forming pattern includes the steps of: preparing a substrate; (202) forming an insulating layer having OH functional groups on a surface of the insulating layer; (203) forming a patterned polymer layer on the insulating layer; patterning the polymer layer by etching the insulating layer; exposing the insulating layer by peeling off (205) the polymer layer; and (207) selectively depositing conductive materials on the insulating layer. COPYRIGHT: (C)2003,JPO