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公开(公告)号:JP2001308345A
公开(公告)日:2001-11-02
申请号:JP2001090670
申请日:2001-03-27
Applicant: IBM
Inventor: PAUL STEVEN ANDREE , COLGAN EVAN GEORGE , JOHN C FLAKE , PETER FRYER , WILLIAM GRAHAM , EUGENE O'SULLIVAN
IPC: H01L21/28 , H01L21/225 , H01L21/336 , H01L29/417 , H01L29/45 , H01L29/786
Abstract: PROBLEM TO BE SOLVED: To provide a method for simplifying formation of an ohmic contact for a thin film transistor. SOLUTION: The method for forming an ohmic contact for a semiconductor device includes a step of forming a metal-contained layer containing integrally formed dopants. The metal-contained layer is patterned to form a constituent element of the semiconductor device, and a semiconductor layer is deposited in contact with the metal-contained layer. The semiconductor device is annealed so that dopants are outwardly diffused from the metal-contained layer within the semiconductor layer to thereby form an ohmic contact.
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2.
公开(公告)号:JP2003218498A
公开(公告)日:2003-07-31
申请号:JP2002290197
申请日:2002-10-02
Applicant: IBM
Inventor: PAUL S ANDREE , JOHN C FLAKE , MICHEL BRUNO , TSUJIMURA TAKATOSHI
IPC: G02F1/1343 , G09F9/00 , H01L21/02 , H01L21/28 , H01L21/288 , H01L21/768 , H01L51/50 , H05K3/18 , H05K3/38 , H05B33/14
Abstract: PROBLEM TO BE SOLVED: To provide a method of forming pattern, a semiconductor device and a metal conductive pattern. SOLUTION: A method of forming pattern includes the steps of: preparing a substrate; (202) forming an insulating layer having OH functional groups on a surface of the insulating layer; (203) forming a patterned polymer layer on the insulating layer; patterning the polymer layer by etching the insulating layer; exposing the insulating layer by peeling off (205) the polymer layer; and (207) selectively depositing conductive materials on the insulating layer. COPYRIGHT: (C)2003,JPO
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