公开(公告)号：US3925119A

公开(公告)日：1975-12-09

申请号：US48863974

申请日：1974-07-15

Applicant: IBM

Inventor： PHILBRICK JOHN W ,  WUESTENHOEFER WILLIAM C

IPC: H01L21/203 ,  H01L21/205 ,  H01L33/00

CPC classification number: H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S118/90 ,  Y10S148/028 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S438/925

Abstract: In the method for the production and deposition of epitaxial films from volatile compounds of gallium, boron and aluminum, and mixtures thereof, and the compounds of phosphorous and arsenic, the improvement is disclosed comprising controlling the total vapor pressure of the gaseous arsenic and phosphorous reactants between limits to produce an ultimate light emitting diode having improved external quantum efficiency. The ratio of the partial pressures of the group V hydrides to each other, for example, the ratio of the arsine partial pressure to the phosphine is fixed, or determined by the composition desired in the solid, while the ratio of the group III halide partial pressure to the total group V hydride pressure can be varied without changing, or modifying, the composition of the final solid. The prior art teaches that variations in this ratio lead to variations in the quality of the resulting material. Applicants have discovered that the quality of the resulting semiconductor material, as measured by the quantum efficiency of a light emitting diode made from it is more sensitive to the total pressure of the reacting gasses (PHCl + PAsH + PPH ) than it is to the ratio (PHCl/ (PAsH + PPH ), the ratio between the group III halides vapor pressure to the group V hydride vapor pressure.

公开(公告)号：CA978257A

公开(公告)日：1975-11-18

申请号：CA167264

申请日：1973-03-21

Applicant: IBM

Inventor： PHILBRICK JOHN W ,  PILLUS CHARLES A ,  POPONIAK MICHAEL R ,  SCHNEIDER CHRISTIAN P

IPC: G01R27/00 ,  G01N27/02 ,  G01R27/02 ,  H01L21/66

Abstract: The apparatus and technique discloses a method for measuring the resistivity of semiconductor material over several decades by varying the inductance of a RF energized coil and where the method is significantly independent of operating frequency, type of semiconductor material and the nature of the sample surface and surface and surface condition or preparation.