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    Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates
    2.
    发明授权
    Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates 失效
    用于在阿魏酸钠基质上沉积砷酸镓钠的方法

    公开(公告)号：US3925119A

    公开(公告)日：1975-12-09

    申请号：US48863974

    申请日：1974-07-15

    Applicant: IBM

    Inventor： PHILBRICK JOHN W ,  WUESTENHOEFER WILLIAM C

    IPC: H01L21/203 ,  H01L21/205 ,  H01L33/00

    CPC classification number: H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02658 ,  Y10S118/90 ,  Y10S148/028 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S438/925

    Abstract: In the method for the production and deposition of epitaxial films from volatile compounds of gallium, boron and aluminum, and mixtures thereof, and the compounds of phosphorous and arsenic, the improvement is disclosed comprising controlling the total vapor pressure of the gaseous arsenic and phosphorous reactants between limits to produce an ultimate light emitting diode having improved external quantum efficiency. The ratio of the partial pressures of the group V hydrides to each other, for example, the ratio of the arsine partial pressure to the phosphine is fixed, or determined by the composition desired in the solid, while the ratio of the group III halide partial pressure to the total group V hydride pressure can be varied without changing, or modifying, the composition of the final solid. The prior art teaches that variations in this ratio lead to variations in the quality of the resulting material. Applicants have discovered that the quality of the resulting semiconductor material, as measured by the quantum efficiency of a light emitting diode made from it is more sensitive to the total pressure of the reacting gasses (PHCl + PAsH + PPH ) than it is to the ratio (PHCl/ (PAsH + PPH ), the ratio between the group III halides vapor pressure to the group V hydride vapor pressure.

    4.
    发明专利
    未知

    公开(公告)号：FR2295575A1

    公开(公告)日：1976-07-16

    申请号：FR7533264

    申请日：1975-10-20

    Applicant: IBM

    Inventor： KEMLAGE BERNARD M ,  WOODALL JERRY M ,  WUESTENHOEFER WILLIAM C

    IPC: H01L21/205 ,  H01L33/00

    Abstract: A process for producing light emitting diodes is disclosed. In the process a primer layer of GaP is pyrolytically deposited on a Si substrate with the resulting epitaxial film thickness being sufficient to form complete coalescence of the epitaxial nuclei, but thin enough to avoid cracks in the epitaxial layer due to stress induced by thermal expansion. The thickness is generally between 1-2 mu . A second layer of GaP is then deposited using the standard halide transport process with thicknesses of 10-20 mu with the graded addition of AsH3, until the particularly desired design composition of GaAsP is obtained. A constant layer of GaAsP is grown on the graded layer.

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