公开(公告)号：US3887994A

公开(公告)日：1975-06-10

申请号：US37529573

申请日：1973-06-29

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES A

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/322 ,  H01L21/336 ,  H01L23/522 ,  H01L23/532 ,  B01J17/00 ,  H01L7/54 ,  H01L11/14

CPC classification number: H01L29/66568 ,  H01L21/31055 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S257/913 ,  Y10S438/91 ,  H01L2924/00

Abstract: Non-doping ions are implanted in the electrode layer of a semiconductor to reduce contamination of the electrode layer by mobile ions. The dosage of the ions is selected to prevent an increase in the fast surface state density when the ions are implanted. The energy level at which the ions are implanted is controlled to position all of the implanted ions within the electrode layer.

Abstract translation: 非掺杂离子注入到半导体的电极层中以减少电极层被移动离子的污染。 选择离子的剂量以防止离子注入时快速表面状态密度的增加。 控制离子注入的能级被控制以将所有注入的离子置于电极层内。

公开(公告)号：CA978257A

公开(公告)日：1975-11-18

申请号：CA167264

申请日：1973-03-21

Applicant: IBM

Inventor： PHILBRICK JOHN W ,  PILLUS CHARLES A ,  POPONIAK MICHAEL R ,  SCHNEIDER CHRISTIAN P

IPC: G01R27/00 ,  G01N27/02 ,  G01R27/02 ,  H01L21/66

Abstract: The apparatus and technique discloses a method for measuring the resistivity of semiconductor material over several decades by varying the inductance of a RF energized coil and where the method is significantly independent of operating frequency, type of semiconductor material and the nature of the sample surface and surface and surface condition or preparation.

公开(公告)号：CA1032658A

公开(公告)日：1978-06-06

申请号：CA201600

申请日：1974-06-04

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES A

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/322 ,  H01L21/336 ,  H01L23/522 ,  H01L23/532

公开(公告)号：FR2305853A1

公开(公告)日：1976-10-22

申请号：FR7603001

申请日：1976-01-29

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES A ,  POPONIAK MICHAEL R ,  SCHWENKER ROBERT O

IPC: C30B31/22 ,  H01L21/22 ,  H01L21/265 ,  H01L21/761

Abstract: In integrated circuit fabrication, a method is provided for simultaneously forming two regions of the same conductivity-type such as the base and isolation regions. In one embodiment, an epitaxial layer of one conductivity-type is formed on a substrate of opposite conductivity-type, after which dopant ions of the opposite conductivity-type are introduced into the epitaxial surface areas which are to provide the base and isolation regions, and in addition, the isolation regions are bombarded with non-dopant ions having a maximum atomic number of two, e.g., hydrogen or helium ion while the base regions are appropriately masked and remain umbombarded, said bombardment is carried out at temperatures below 300 DEG C, preferably room temperature. The bombardment is preferably carried out so that the non-dopant ions are implanted primarily in regions below the isolation regions. Next, the wafer is heated at a temperature at a range of from 600 DEG - 900 DEG C which is substantially below normal drive-in diffusion temperatures for unbombarded doped regions. The heating to be maintained for a period sufficient to drive-in diffuse the bombarded isolation regions through the epitaxial layer into contact with the substrate but is insufficient to drive-in the unbombarded base regions to such a depth.