公开(公告)号：DE2425185A1

公开(公告)日：1975-01-16

申请号：DE2425185

申请日：1974-05-24

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES ANTHONY

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/322 ,  H01L21/336 ,  H01L23/522 ,  H01L23/532

公开(公告)号：AU6856874A

公开(公告)日：1975-11-06

申请号：AU6856874

申请日：1974-05-03

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES ANTHONY

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/322 ,  H01L21/336 ,  H01L23/522 ,  H01L23/532 ,  H01L7/00 ,  H01L7/54 ,  H01L11/14

公开(公告)号：DE2611559A1

公开(公告)日：1976-10-07

申请号：DE2611559

申请日：1976-03-18

Applicant: IBM

Inventor： KU SAN-MEI ,  PILLUS CHARLES ANTHONY ,  POPONIAK MICHAEL ROBERT ,  SCHWENKER ROBERT OTTO

IPC: C30B31/22 ,  H01L21/22 ,  H01L21/265 ,  H01L21/761 ,  B01J17/36 ,  B01J17/34

Abstract: In integrated circuit fabrication, a method is provided for simultaneously forming two regions of the same conductivity-type such as the base and isolation regions. In one embodiment, an epitaxial layer of one conductivity-type is formed on a substrate of opposite conductivity-type, after which dopant ions of the opposite conductivity-type are introduced into the epitaxial surface areas which are to provide the base and isolation regions, and in addition, the isolation regions are bombarded with non-dopant ions having a maximum atomic number of two, e.g., hydrogen or helium ion while the base regions are appropriately masked and remain umbombarded, said bombardment is carried out at temperatures below 300 DEG C, preferably room temperature. The bombardment is preferably carried out so that the non-dopant ions are implanted primarily in regions below the isolation regions. Next, the wafer is heated at a temperature at a range of from 600 DEG - 900 DEG C which is substantially below normal drive-in diffusion temperatures for unbombarded doped regions. The heating to be maintained for a period sufficient to drive-in diffuse the bombarded isolation regions through the epitaxial layer into contact with the substrate but is insufficient to drive-in the unbombarded base regions to such a depth.

公开(公告)号：DE2315795A1

公开(公告)日：1973-11-08

申请号：DE2315795

申请日：1973-03-29

Applicant: IBM

Inventor： PHILBRICK JOHN WHITNEY ,  PILLUS CHARLES ANTHONY ,  POPONIAK MICHAEL ROBERT ,  SCHNEIDER CHRISTIAN PAUL

IPC: G01R27/00 ,  G01N27/02 ,  G01R27/02 ,  H01L21/66 ,  G01R31/26

Abstract: The apparatus and technique discloses a method for measuring the resistivity of semiconductor material over several decades by varying the inductance of a RF energized coil and where the method is significantly independent of operating frequency, type of semiconductor material and the nature of the sample surface and surface and surface condition or preparation.