Abstract:
PROBLEM TO BE SOLVED: To provide an effective column restoration system which replaces a defective column element with a redundant element. SOLUTION: A column redundant device 10 includes a fuse information storage device for every individual microcell to store fuse information indicating the location of any one of defective elements. A first bank address decoding mechanism decodes a reading bank address corresponding to a first microcell and a second bank address decoding mechanism decodes a writing bank address corresponding to a second microcell. When at least one defective column element is included in the first microcell, the device 10 generates an internal column address corresponding to at least one defective column element in the first microcell. Similarly, the device 10 generates an internal column address corresponding to at least one defective column element in the second microcell when at least one defective column element is included in the second microcell. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a method and structure for performing a high-speed operation in space smaller than the conventional one by avoiding the need of using scan latch for the maintenance of fuse information. SOLUTION: An SRAM array is a portion of a scan chain and is connected to upstream and downstream latches constituting the scan chain. When data is serially read in the scan chain, the number of bits read in an embedded DRAM structure is counted. After a counter 120 counts an amount that is equal to the number of stored bits of the entire downstream scan latches in the scan chain, in this method and structure, fuse information is loaded to a shift register. When the shift register is filled, shift register contents are loaded to an SRAM line. The length of the shift register and the SRAM line is equal to that of one fuse word. Until the SRAM array is filled, the processes of shift register load and SRAM array load are repeated. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
KI9-91-010 MEMORY SYSTEM AND UNIQUE MEMORY CHIP ALLOWING ISLAND INTERLACE A memory system and a unique memory chip is disclosed wherein multiple islands on a chip can be separately accessed by separate island controllers whereby concurrent use of the several islands or arrays on a chip can be achieved.
Abstract:
A memory system (15) and a memory chip is disclosed wherein multiple islands (21) on a chip can be separately accessed by separate island controllers whereby concurrent use of the several islands or arrays on a chip can be achieved.