公开(公告)号：JPS5331968A

公开(公告)日：1978-03-25

申请号：JP9227277

申请日：1977-08-02

Applicant: IBM

Inventor： NIKORASU JIYOOJI KUUPUMAN ,  POORU ANSONII TOTSUTA

IPC: H01L23/34 ,  H01L23/373 ,  H01L23/40 ,  H01L23/433

公开(公告)号：JPS60200964A

公开(公告)日：1985-10-11

申请号：JP24354484

申请日：1984-11-20

Applicant: IBM

Inventor： UIRIAMU UORUTAA BURAUN JIYUNIA ,  UEIN JIYAKUSON KARII ,  GERUHARUTO PII DARUKE ,  FURANSHISU SEODOA RAPURU ,  POORU ANSONII TOTSUTA

IPC: H01L21/68 ,  C23C14/50 ,  H01L21/203 ,  H01L21/67 ,  H01L21/677 ,  H01L21/683

公开(公告)号：JPS58119663A

公开(公告)日：1983-07-16

申请号：JP18221782

申请日：1982-10-19

Applicant: IBM

Inventor： RAJI NABUINCHIYANDORA MASUTA ,  MAABUIN SUTANREE PITSUTORAA ,  POORU ANSONII TOTSUTA ,  NOOMAN JIYOOJI EINSURII ,  POORU HARII PAAMATEIA

IPC: B23K1/20 ,  H01L21/48 ,  H01L23/498 ,  H01L23/50 ,  H05K3/24 ,  H05K3/34

Abstract: In the process for joining metallic coated connector pins (20) to a multilayer ceramic substrate (10), contact areas on the substrate are formed by sequential coatings of molybdenum (12) and nickel (14), which are heated to diffuse the nickel. A pure gold paste is applied by screen printing, for example, followed by the step of firing to burn out the paste binder and to sinter the pure gold particles onto a dense low porosity structure. The sintering operation converts the Ni film (14) into a continuous Au-Ni solid solution. During pin braze, Ni-Sn intermetallics are dispersed in a gold rich matrix of the Au-Ni solid solution.

公开(公告)号：JPH0818205A

公开(公告)日：1996-01-19

申请号：JP14186495

申请日：1995-06-08

Applicant: IBM

Inventor： HENRII ATOKINSON NAI ZA SAADO ,  JIEFURII FUREDERITSUKU ROODAA ,  HOO MIN TON ,  POORU ANSONII TOTSUTA

IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485

Abstract: PURPOSE: To allow a CrCu alloy layer to be selectively etched also and improve the yield and reliability of the structure of interconnection solder terminals, by etching a metal adhesive layer. CONSTITUTION: The electroplated solder terminal comprises a lower metal adhesive layer 80, a CrCu intermediate barrier layer 85 on the adhesive layer 80, a soldered joint layer 90 on the CrCu layer 85, and an upper solder layer 120. The adhesive layer 80 is a TiW layer or TiN layer. To manufacture this improved terminal metal, unnecessary regions, such as the soldered joint layer, the intermediate barrier layer and the lower joint layer, are removed from the area outside the solder region, and the soldered joint layer 90, the CrCu intermediate barrier layer 85 and the TiW lower metal adhesive layer 80 are formed. Specifically, after the deposition of TiW, the CrCu layer is deposited from a CrCu alloy target by sputtering, and further a Cu layer is deposited form a Cu target by sputtering. Thereafter, solder is selectively applied to the open positions between substrates to form the solder layer 120, and then etching is performed.

公开(公告)号：JPH031570A

公开(公告)日：1991-01-08

申请号：JP20710589

申请日：1989-08-11

Applicant: IBM

Inventor： HANGUUCHIYANGU WAADO FUANGU ,  POORU ANSONII TOTSUTA

IPC: H01L23/522 ,  H01L21/28 ,  H01L21/768 ,  H01L23/532 ,  H01L29/43

Abstract: PURPOSE: To provide a substrate contact point stud, having low electric migration characteristics without void, by comprising a first metal layer which, reaction with substrate material for sticking, is so deposited as to fill-up the hole of an insulation layer, a second metal layer of fire-proof metal deposited over it, and a third metal layer of fire-proof metal deposited over it. CONSTITUTION: An insulation body is deposited all over a substrate 1. Then, with the insulation body flattened, each part is selectively removed at a pre-determined position for a substrate surface for contact point to be exposed. Then, a reactive sticking layer 15 is deposited all over the insulation body and a contact point hole 5, and a crystal seed layer 21 is deposited on the sticking layer 15. These both layers are stuck by spattering with the sticking layer 15 being transition metal capable of reducing SiO2 , in addition, the crystal seed layer 21 preferred to be fire-proof metal. Then, fire-proof metal such as tungsten is chemically grown in gaseous atmosphere for completing formation of a contact point stud as a filler layer 17.

公开(公告)号：JPS587833A

公开(公告)日：1983-01-17

申请号：JP8172482

申请日：1982-05-17

Applicant: IBM

Inventor： SAMUNASU BATACHIYARIA ,  NIKORASU JIYOOJI KUUPUMAN ,  POORU ANSONII TOTSUTA

IPC: H05K1/18 ,  H01L21/60 ,  H01L23/485