Memory controllers for solid-state storage devices

    公开(公告)号:GB2606885A

    公开(公告)日:2022-11-23

    申请号:GB202208932

    申请日:2020-10-26

    Applicant: IBM

    Abstract: A method, computer program product, and system for controlling operation of an array of non-volatile memory cells comprising cells which are selectively configurable for single-bit and multibit storage. The method includes a memory controller selectively configuring the array for operation in a hybrid mode, in which the array comprises both cells configured for single-bit storage and cells configured for multibit storage, and a multibit mode in which all cells in the array are configured for multibit storage. The method further includes the memory controller dynamically switching between the hybrid and multibit mode configurations of the array corresponding to array capacity-usage traversing a defined threshold level associated with enhance endurance of the array.

    Memory controllers for solid-state storage devices

    公开(公告)号:GB2606885B

    公开(公告)日:2023-10-11

    申请号:GB202208932

    申请日:2020-10-26

    Applicant: IBM

    Abstract: Aspects of the present invention disclose a method, computer program product, and system for controlling operation of an array of non-volatile memory cells comprising cells which are selectively configurable for single-bit and multibit storage. The method includes a memory controller selectively configuring the array for operation in a hybrid mode, in which the array comprises both cells configured for single-bit storage and cells configured for multibit storage, and a multibit mode in which all cells in the array are configured for multibit storage. The method further includes the memory controller dynamically switching between the hybrid and multibit mode configurations of the array corresponding to array capacity-usage traversing a defined threshold level associated with enhance endurance of the array.

    Updating corrective read voltage offsets in non-volatile random access memory

    公开(公告)号:GB2604517A

    公开(公告)日:2022-09-07

    申请号:GB202207336

    申请日:2020-10-16

    Applicant: IBM

    Abstract: A computer-implemented method, according to one approach, includes: using a first calibration scheme to calibrate the given page in the block by calculating a first number of independent read voltage offset values for the given page (606). An attempt is made to read the calibrated given page (608), and in response to determining that an error correction code failure occurred when attempting to read the calibrated given page, a second calibration scheme is used to recalibrate the given page in the block (612). The second calibration scheme is configured to calculate a second number of independent read voltage offset values for the given page. An attempt to read the recalibrated given page is also made (614). In response to determining that an error correction code failure did occur when attempting to read the recalibrated given page, one or more instructions to relocate data stored in the given page are sent (618).

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