公开(公告)号：JP2002246594A

公开(公告)日：2002-08-30

申请号：JP2001388832

申请日：2001-12-21

Applicant: IBM

Inventor： BOJARCZUK NESTOR A JR ,  CARTIER EDUARD ,  GUHA SUPRATIK ,  RAGNARSSON LARS-AKE

IPC: H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L29/51

Abstract: PROBLEM TO BE SOLVED: To provide a method and structure for using a thin gate dielectric substance in a semiconductor device, such as a field effect transistor, etc. SOLUTION: The structure (for example, a field effect transistor) and a method for manufacturing the structure are provided with a substrate having a source region, a drain region, and a channel region provided between the source and drain regions, an insulating layer arranged on the channel region, and a gate electrode arranged on the insulating layer. The insulating layer includes an aluminum nitride-containing layer arranged on the channel region.