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公开(公告)号：JP2004056145A
公开(公告)日：2004-02-19
申请号：JP2003275607
申请日：2003-07-16
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： FAROOQ MUKTA , KNICKERBOCKER JOHN , REDDY SRINIVASA , RITA ROBERT
IPC: H01L23/12 , H01L23/32 , H01L23/498
CPC classification number: H01L23/49827 , H01L23/49822 , H01L2224/16 , H01L2924/00014 , H01L2224/0401
Abstract: PROBLEM TO BE SOLVED: To provide an interposer on which surface a high-performance thin-film dielectric capacitor is formed and has a silicon/oxide silicon film substrate.
SOLUTION: The interposer is positioned between an integrated circuit and the ceramic substrate and has an oxide layer formed on the polished surface of the silicon substrate and a thin-film dielectric capacitor formed on the oxide layer. The interposer includes a plurality of metallized vias electrically connected with one of the electrodes of the thin-film dielectric capacitor; the vias 314, 316 and 318 for transmitting an electric power, ground and signal to the ceamic substrate 305 and the integrated circuit. The interposer connects the metallized vias to the integrated circuit by soldering connection and connects the vias for transmitting the electric power, ground and signal from the ceramic substrate to the interposer by soldering connection. The dielectric 334 of the thin-film dielectric capacitor can be selected from a high K titanate, a lead niobate or its derivative, or a group of the other high K dielectric of a lead tungstate or its derivative etc.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：DE69208675T2
公开(公告)日：1996-09-26
申请号：DE69208675
申请日：1992-06-23
Applicant: IBM
Inventor： AOUDE FARID , DAVID LAWRENCE , DIVAKARUNI RENUKA SHASTRI , FAROOQ SHAJI , HERRON LESTER , LASKY HAL , MASTREANI ANTHONY , NATARAJAN GOVINDARAJAN , REDDY SRINIVASA , SURA VIVEK MADAN , VALLABHANENI RAO , WALL DONALD RENE
Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
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公开(公告)号：DE69208675D1
公开(公告)日：1996-04-04
申请号：DE69208675
申请日：1992-06-23
Applicant: IBM
Inventor： AOUDE FARID , DAVID LAWRENCE , DIVAKARUNI RENUKA SHASTRI , FAROOQ SHAJI , HERRON LESTER , LASKY HAL , MASTREANI ANTHONY , NATARAJAN GOVINDARAJAN , REDDY SRINIVASA , SURA VIVEK MADAN , VALLABHANENI RAO , WALL DONALD RENE
Abstract: A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
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