Electronic component structure and manufacture of thin film multilayered capacitor
    2.
    发明专利
    Electronic component structure and manufacture of thin film multilayered capacitor 有权
    薄膜多层电容器的电子元件结构与制造

    公开(公告)号:JPH11274407A

    公开(公告)日:1999-10-08

    申请号:JP3290499

    申请日:1999-02-10

    CPC classification number: H01L28/40 H01G4/306 Y10T29/435

    Abstract: PROBLEM TO BE SOLVED: To provide an electronic component structure in which an interposer thin film capacitor structure is used between an electronic component and a multilayered circuit card. SOLUTION: In order to prevent the occurrence of fatal electric short circuits in an upper thin film area due to pits, voids, undulations on the surface of a substrate, a first metallic layer 5 having a thickness of about 0.5 μm to 10 μm is formed on the substrate and a thin film containing a dielectric film 6 and a second metallic film is formed on the metallic layer 5. The first metallic layer 5 is composed of Pt, another electrode metal, or a combination of Pt, Cr, Cu metal, and a diffusion barrier layer. In order to increase the adhesive power of the layer 5, an additional Ti layer can be used. The thicknesses of the Cr layer, Cu layer, diffusion barrier layer, and Pt layer constituting the first metallic layer 5 are respectively adjusted to about 200 Å, between about 0.5 μm and about 10 μm, between about 1,000 Å and about 5,000 Å and between about 100 Å and about 2,500 Å.

    Abstract translation: 要解决的问题:提供一种在电子部件和多层电路卡之间使用中介层薄膜电容器结构的电子部件结构。 解决方案:为了防止由于基板表面上的凹坑,空隙,波纹引起的上部薄膜区域中的致命电短路,形成厚度为约0.5μm至10μm的第一金属层5 在金属层5上形成含有介电膜6和第二金属膜的薄膜。第一金属层5由Pt,另一种电极金属或Pt,Cr,Cu金属, 和扩散阻挡层。 为了增加层5的粘合力,可以使用另外的Ti层。 构成第一金属层5的Cr层,Cu层,扩散阻挡层和Pt层的厚度分别调节为约200,约0.5μm和约10μm之间,介于约至约5000之间和介于 约100埃和约2,500埃。

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