Abstract:
PROBLEM TO BE SOLVED: To make a bonding part sufficiently strong, and prevent structural completeness from being lost in the subsequent reflow process, by making the melting point of a second solder bond at one edge of a connector lower than that at the other edge. SOLUTION: In an assembled interconnecting structure with a completed column grid array, an interconnecting structure (column) composed of an element with other shape such as a spherical shape is connected to an electronic module board 4 and a circuit card 10 via a land 17. The other edge of the column is connected to the land 17 of the circuit card 10, by the use of a Pb/Sn eutectic solder 17 (second solder bond), which has a lower melting point than that of a transient melting solder bonding part 3. The melting point of the eutectic solder 18 is normally 200 deg.C or below. The connection is achieved by the transient melting solder bonding part 3, which contains fine metal powder additive and is used for mounting the column on an input/output pad 5 on the board 4.
Abstract:
PROBLEM TO BE SOLVED: To provide an electronic component structure in which an interposer thin film capacitor structure is used between an electronic component and a multilayered circuit card. SOLUTION: In order to prevent the occurrence of fatal electric short circuits in an upper thin film area due to pits, voids, undulations on the surface of a substrate, a first metallic layer 5 having a thickness of about 0.5 μm to 10 μm is formed on the substrate and a thin film containing a dielectric film 6 and a second metallic film is formed on the metallic layer 5. The first metallic layer 5 is composed of Pt, another electrode metal, or a combination of Pt, Cr, Cu metal, and a diffusion barrier layer. In order to increase the adhesive power of the layer 5, an additional Ti layer can be used. The thicknesses of the Cr layer, Cu layer, diffusion barrier layer, and Pt layer constituting the first metallic layer 5 are respectively adjusted to about 200 Å, between about 0.5 μm and about 10 μm, between about 1,000 Å and about 5,000 Å and between about 100 Å and about 2,500 Å.
Abstract:
PROBLEM TO BE SOLVED: To provide an organic inorganic compound electronic substrate which can be manufactured at a low cost, a compound electronic substrate wherein relative permitivity, impedance, CTE, double refraction and mutual connection stress are low, and package card reliability is high, a compound electronic substrate wherein Tg is high and thermal stability is superior, and a compound electronic substrate having low hygroscopicity. SOLUTION: A compound electronic and/or optical substrate contains polymer material and ceramic material, and has relative permitivity lower than 4 and coefficient of thermal expansion of 8-14 ppm/ deg.C at 100 deg.C. This compound substrate is composed of polymer material containing ceramic filler material or ceramic material containing polymer filler material.
Abstract:
A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
Abstract:
FI9-90-027 COPPER-BASED PASTE CONTAINING COPPER ALUMINATE FOR MICROSTRUCTURAL AND SHRINKAGE CONTROL OF COPPER-FILLED VIAS A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
Abstract:
A COMPOSITE ELECTRONIC AND/OR OPTICAL SUBSTRATE INCLUDING POLYMERIC AND CERAMIC MATERIAL WHEREIN THE COMPOSITE SUBSTRATE HAS A DIELECTRIC CONSTANT LESS THAN 4 AND A COEFFICIENT OF THERMAL EXPANSION OF 8 TO 14 PPM/°C AT 100°C. THE COMPOSITE SUBSTRATE MAY BE EITHER CERAMIC-FILLED POLYMERIC MATERIAL OR POLYMER-FILLED CERAMIC MATERIAL. (FIGURE 1)
Abstract:
A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.
Abstract:
A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.