公开(公告)号：JPH10135460A

公开(公告)日：1998-05-22

申请号：JP29370597

申请日：1997-10-27

Applicant: IBM

Inventor： KARANAMU BARASUBURAMANYAMU ,  STEVEN BRUCE BRODSKIJ ,  RICHARD ANTHONY CONTEY ,  BADDY L KARE

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To prevent dopant atoms from migrating during a post gate conductor heat cycle by forming a gate electrode from a stack of doped polysilicon layer, tungsten nitride dopant barrier layer and tungsten silicide layer. SOLUTION: A MOSFET gate stack 27 is composed of a silicon dioxide gate oxide film 18, doped polysilicon control 20, tungsten nitride layer 22, tungsten silicide layer 24 and silicon nitride cap layer 26 in an insulation process. In the polysilicon-WSiX structure, an adequate dopant diffusion barrier is formed to suppress the dopant from outwards diffusing min. in the WSiX from the polysilicon layer. The diffusion barrier prevents the dopant from depleting in the polysilicon during a post-WSiX deposition annealing, the equivalent oxide thickness from increasing and associated MOSFET characteristics from deteriorating.

公开(公告)号：JP2001093895A

公开(公告)日：2001-04-06

申请号：JP2000244146

申请日：2000-08-11

Applicant: IBM

Inventor： BARBEE STEVEN G ,  RICHARD ANTHONY CONTEY ,  KOSTENKO ALEXANDER ,  SARMA NARAYANA V ,  WILSON DONALD L ,  WONG JUSTIN WAI-CHOW ,  ZUHOSKI STEVEN P

IPC: C23C16/40 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To provide adhering treatment for forming a high quality aluminum oxide film by using low-pressure chemical vapor deposition(LPCVD) on a silicon substrate or an equivalent substrate by temperature controlling a steam transfer system during chemical vapor deposition of aluminum oxide. SOLUTION: A device in a chemical vapor deposition(CVD) system monitors the temperature of an actual wafer/substrate 10 during adhering treatment, and forms a high quality aluminum oxide film under real-time wafer/substrate control. In this case, source steam for LPCVD adhering aluminum oxide to a silicon substrate is repeatedly supplied exactly. This device is provided with a heated source substance, a heated transfer passage, heated inert gas discharge passages 21a-21c, pressure difference large flow rate controllers 24 and 28, a control system having a related valve, and a vacuum treatment chamber having a wall which is to be temperature-controlled as a complete source transfer system.