公开(公告)号：JP2001093895A

公开(公告)日：2001-04-06

申请号：JP2000244146

申请日：2000-08-11

Applicant: IBM

Inventor： BARBEE STEVEN G ,  RICHARD ANTHONY CONTEY ,  KOSTENKO ALEXANDER ,  SARMA NARAYANA V ,  WILSON DONALD L ,  WONG JUSTIN WAI-CHOW ,  ZUHOSKI STEVEN P

IPC: C23C16/40 ,  C23C16/46 ,  C23C16/52 ,  H01L21/205 ,  H01L21/31

Abstract: PROBLEM TO BE SOLVED: To provide adhering treatment for forming a high quality aluminum oxide film by using low-pressure chemical vapor deposition(LPCVD) on a silicon substrate or an equivalent substrate by temperature controlling a steam transfer system during chemical vapor deposition of aluminum oxide. SOLUTION: A device in a chemical vapor deposition(CVD) system monitors the temperature of an actual wafer/substrate 10 during adhering treatment, and forms a high quality aluminum oxide film under real-time wafer/substrate control. In this case, source steam for LPCVD adhering aluminum oxide to a silicon substrate is repeatedly supplied exactly. This device is provided with a heated source substance, a heated transfer passage, heated inert gas discharge passages 21a-21c, pressure difference large flow rate controllers 24 and 28, a control system having a related valve, and a vacuum treatment chamber having a wall which is to be temperature-controlled as a complete source transfer system.