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Patent Agency Ranking
公开(公告)号：JP2001093895A
公开(公告)日：2001-04-06
申请号：JP2000244146
申请日：2000-08-11
Applicant: IBM
Inventor： BARBEE STEVEN G , RICHARD ANTHONY CONTEY , KOSTENKO ALEXANDER , SARMA NARAYANA V , WILSON DONALD L , WONG JUSTIN WAI-CHOW , ZUHOSKI STEVEN P
IPC: C23C16/40 , C23C16/46 , C23C16/52 , H01L21/205 , H01L21/31
Abstract: PROBLEM TO BE SOLVED: To provide adhering treatment for forming a high quality aluminum oxide film by using low-pressure chemical vapor deposition(LPCVD) on a silicon substrate or an equivalent substrate by temperature controlling a steam transfer system during chemical vapor deposition of aluminum oxide. SOLUTION: A device in a chemical vapor deposition(CVD) system monitors the temperature of an actual wafer/substrate 10 during adhering treatment, and forms a high quality aluminum oxide film under real-time wafer/substrate control. In this case, source steam for LPCVD adhering aluminum oxide to a silicon substrate is repeatedly supplied exactly. This device is provided with a heated source substance, a heated transfer passage, heated inert gas discharge passages 21a-21c, pressure difference large flow rate controllers 24 and 28, a control system having a related valve, and a vacuum treatment chamber having a wall which is to be temperature-controlled as a complete source transfer system.
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公开(公告)号：JP2004193575A
公开(公告)日：2004-07-08
申请号：JP2003380487
申请日：2003-11-10
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： NATZLE WESLEY C , AHLGREN DAVID C , BARBEE STEVEN G , CANTELL MARC W , JAGANNATHAN BASANTH , LANZEROTTI LOUIS D , SUBBANNA SESHARDI , RYAN W WOOTHRICH
IPC: H01L21/302 , H01L21/311 , H01L21/331 , H01L21/8249 , H01L29/732
CPC classification number: H01L29/66242 , H01L21/31116 , H01L21/8249
Abstract: PROBLEM TO BE SOLVED: To provide an oxide etching process that can be used for manufacturing the emitter and base in a bipolar SiGe device. SOLUTION: The low-temperature process used gives electric insulation between the emitters and bases by COR (chemical oxide removal) etching protecting the insulating TEOS (tetraethylorthosilicate) glass 22. The insulating TEOS glass 22 brings about the capacitance reduction, and promotes to achieve high-speed. COPYRIGHT: (C)2004,JPO&NCIPI
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公开(公告)号：DE69709214D1
公开(公告)日：2002-01-31
申请号：DE69709214
申请日：1997-03-05
Applicant: IBM
Inventor： LI LEPING , BARBEE STEVEN G , HALPERIN ARNOLD
Abstract: The apparatus for endpoint detection in removal of a film from a semiconductor wafer, comprises a sensor for creating a signal responsive to the film removal process. A positive feedback amplifier is coupled to the sensor, and has a mode selector. An analyser is coupled to the positive feedback amplifier. The sensor comprises a capacitor and an inductor. The mode selector has a device for selecting operation in frequency mode. A filter is coupled between the positive feedback amplifier and the analyser, and comprises a multi-order filter. The analyser comprises a frequency counter. The mode selector comprises a device for selecting operation in automatic amplitude mode, and automatically selects the gain of the positive feedback amplifier and sensor so that an oscillation is produced when the film is removed from the wafer. The gain selector comprises a device for automatically setting a voltage on a varactor.
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公开(公告)号：CA1228268A
公开(公告)日：1987-10-20
申请号：CA509774
申请日：1986-05-22
Applicant: IBM
Inventor： BARBEE STEVEN G , DEVINE GREGORY P , PATRICK WILLIAM J , SEELEY GERARD
IPC: C23C16/40 , C23C16/448 , C23C16/52 , C23C14/54
Abstract: FI9-83-093 VACUUM DEPOSITION SYSTEM WITH IMPROVED MASS FLOW CONTROL A system and method for forming a uniform layer of a material from a vapor phase onto the surface of an object at a high rate of deposition includes a heated reservoir for vaporizing the material to be deposited, a reactor containing the objects to be coated, and a vacuum device for flowing the gaseous material from the reservoir to the reactor. The mass flow rate of the gas from the reservoir is held constant by precisely controlling the pressure at the outlet of the reservoir and at the inlet of the reactor. In one embodiment the upstream pressure is controlled by a valve responsive to a pressure sensor at the reservoir outlet, and the downstream pressure is controlled by adjusting the vacuum in the reactor as measured by a pressure sensor at the reactor inlet. A vacuum bypass line around the reactor is provided to stabilize the upstream pressure prior to admitting the gas to the reactor when a deposition cycle is commenced, and the connection between the reservoir and the reactor, and the flow control valves and pressure sensors in the flow path are maintained at a temperature sufficient to prevent condensation of the vapor downstream of the reservoir.
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公开(公告)号：DE69709214T2
公开(公告)日：2002-08-22
申请号：DE69709214
申请日：1997-03-05
Applicant: IBM
Inventor： LI LEPING , BARBEE STEVEN G , HALPERIN ARNOLD
Abstract: The apparatus for endpoint detection in removal of a film from a semiconductor wafer, comprises a sensor for creating a signal responsive to the film removal process. A positive feedback amplifier is coupled to the sensor, and has a mode selector. An analyser is coupled to the positive feedback amplifier. The sensor comprises a capacitor and an inductor. The mode selector has a device for selecting operation in frequency mode. A filter is coupled between the positive feedback amplifier and the analyser, and comprises a multi-order filter. The analyser comprises a frequency counter. The mode selector comprises a device for selecting operation in automatic amplitude mode, and automatically selects the gain of the positive feedback amplifier and sensor so that an oscillation is produced when the film is removed from the wafer. The gain selector comprises a device for automatically setting a voltage on a varactor.
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