公开(公告)号：JPH07201960A

公开(公告)日：1995-08-04

申请号：JP23153394

申请日：1994-09-27

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To suppress the formation of vacuum arcs between the back of a wafer in the middle of a process and an electrostatic chuck and to improve insulating destruction resistance by biasing an electrode on self-bias potential, introduced by plasma on the wafer and laying a conductive protection circle in self-bias potential. CONSTITUTION: A wafer 600 is brought into contact with plasma and is at self-bias potential Vsb which is much lower than plasma potential at time average, and two electrodes 100 and 200 of the chuck are biased in prescribed potentials above and below Vsb . A conductive circle 300, which is arranged downward and whose top face is almost flush with the top face of a grasping electrode has one or plural holes making a conductive element 310 that is brought into contact with plasma pass through and it gives reference for self- bias potential. Thus, the two electrodes on characteristic reference potential are maintained for respective bias potentials.

公开(公告)号：JPH07201962A

公开(公告)日：1995-08-04

申请号：JP26648694

申请日：1994-10-31

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  REIMONDO ROBAATO RATSUKERU ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PURPOSE: To obtain superior insulating characteristic, to obtain a flat clamp surface, and to form a high clamp force for a work piece by machining an element part, forming an anode oxidized insulating surface, and operating assembly by using a mount. CONSTITUTION: The outer diameter size of electrodes 100 and 200 is rough machined, the recessed parts are finished by machining, and the vertical surface and the bottom part of the electrode 100 are finished by machining. Then, oxidized surface layers 102 and 202 are formed on the electrodes 100 and 200, and they are mounted to a mount 400. A step difference is formed between a surface 410 corresponding to a top face 110 of the circular electrode 100 and a surface 420 corresponding to a top face 220 of the base electrode 200, and a clamp force is affected by this step difference. When the step difference between the surfaces 110 and 220 is 0.00508 mm, it is allowable. Therefore, superior insulating characteristic is obtained, a flat clamp surface is obtained, and a clamp force for a workpiece can be increased.

公开(公告)号：JPH07201959A

公开(公告)日：1995-08-04

申请号：JP23149094

申请日：1994-09-27

Applicant: IBM

Inventor： MAIKERU SUKOTSUTO BAANZU ,  JIYON HAWAADO KERAA ,  JIYOSEFU SUKINAA ROOGAN ,  ROBAATO IIRAI TOMUKIN ,  ROBAATO PIITAA UESUTOFUIIRUDO

IPC: B23Q3/15 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

Abstract: PURPOSE: To suppress the formation of vacuum arcs between the back of a wafer in the middle of a process and an electrostatic chuck main body by laying a conductive protection circle floating near self-bias potential, introduced by plasma on the wafer. CONSTITUTION: A circular path 515 extends to the periphery of the outer part of a top face in an electrode 200 and forms a gas supply groove. A protective film 300 facing downward has a thin conductive member 265 having the top face which is flush with the top face 210 of a grasping electrode. A base part 260 is insulated form the electrode 200, and it floats by coupling capacity to a potential approximated to the wafer potential. A wafer 600 is brought into contact with plasma, and therefore it is in self-bias potential which is much lower than the time-averaged plasma potential. Namely, the time-averaged potential on the wafer is typically much smaller than ground potential. Thus, the protective film establishes an equipotential region, which is equal to the potential of a work piece between the work piece and an outer electrode.