公开(公告)号：EP1661163A4

公开(公告)日：2008-08-06

申请号：EP04782258

申请日：2004-08-26

Applicant: IBM

Inventor： BURNHAM JAY S ,  NAKOS JAMES S ,  QUINLIVAN JAMES J ,  ROQUE BERNIE JR ,  SHANK STEVEN M ,  WARD BETH A

IPC: H01L21/28 ,  H01L20060101 ,  H01L21/31 ,  H01L21/314 ,  H01L21/336 ,  H01L21/469 ,  H01L29/51

CPC classification number: H01L21/28202 ,  H01L21/28035 ,  H01L21/3144 ,  H01L29/518

Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate (100); forming a silicon dioxide layer (110) on a top surface of the substrate (105); performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer (110A). The dielectric layer so formed may be used in the fabrication of MOSFETs (145).

公开(公告)号：WO2005020291A2

公开(公告)日：2005-03-03

申请号：PCT/US2004027740

申请日：2004-08-26

Applicant: IBM ,  BURNHAM JAY S ,  NAKOS JAMES S ,  QUINLIVAN JAMES J ,  ROQUE BERNIE JR ,  SHANK STEVEN M ,  WARD BETH A

Inventor： BURNHAM JAY S ,  NAKOS JAMES S ,  QUINLIVAN JAMES J ,  ROQUE BERNIE JR ,  SHANK STEVEN M ,  WARD BETH A

IPC: H01L20060101 ,  H01L21/31 ,  H01L21/336 ,  H01L21/469 ,  H01L

CPC classification number: H01L21/28202 ,  H01L21/28035 ,  H01L21/3144 ,  H01L29/518

Abstract: A method of fabricating a gate dielectric layer, including: providing a substrate (100); forming a silicon dioxide layer (110) on a top surface of the substrate (105); performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitride layer (110A). The dielectric layer so formed may be used in the fabrication of MOSFETs (145).

Abstract translation: 一种制造栅极电介质层的方法，包括：提供衬底（100）; 在所述衬底（105）的顶表面上形成二氧化硅层（110）; 在还原气氛中进行等离子体氮化，将二氧化硅层转换成氮氧化硅层（110A）。 如此形成的电介质层可用于制造MOSFET（145）。