公开(公告)号：DE3480009D1

公开(公告)日：1989-11-09

申请号：DE3480009

申请日：1984-05-23

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  ROSENBERG JAMES JORDAN ,  WOODALL JERRY MACPHERSON ,  WRIGHT STEVEN LORENZ

IPC: C01B33/02 ,  C30B23/02 ,  C30B23/06 ,  C30B23/08 ,  C30B29/06 ,  H01L21/203

Abstract: A silicon source for molecular beam epitaxial deposition heated by electric current through the silicon is provided wherein the silicon is configured in a plurality of filaments positioned between two broader electrical contact areas. … The figures shows such a source comprising Z-shaped silicon filaments 15, 16, 17 integrated with an extending between electrical contact headers 18, 19. A current source is connected in series with the source and causes resistance heating of the source.