公开(公告)号：GB2495452A

公开(公告)日：2013-04-10

申请号：GB201301220

申请日：2011-06-24

Applicant: IBM

Inventor： CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE ,  SEBASTIAN ABU

IPC: H01L45/00

Abstract: Disclosed is a method for manufacturing a resistive memory element (1) which comprises: providing a storage layer (2) comprising a resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the storage layer (2), wherein the storage layer (2) is disposed between a bottom contact layer (3) and a top contact layer (4); and doping the resistance changeable material with a dopant material, preferably hydrogen, nitrogen or a transition metal, and/or annealing the material. A corresponding resistive memory element (1) includes a bottom contact layer (3), a top contact layer (4) and a storage layer (2) disposed between the bottom contact layer (3) and the top contact layer (4), wherein the storage layer (2) comprises a resistance changeable material comprising carbon that is doped with a dopant material.