公开(公告)号：WO2012001599A2

公开(公告)日：2012-01-05

申请号：PCT/IB2011052790

申请日：2011-06-24

Applicant: IBM ,  CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS S ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE P ,  SEBASTIAN ABU

Inventor： CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS S ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE P ,  SEBASTIAN ABU

IPC: H01L45/00

CPC classification number: H01L45/16 ,  G11C13/0002 ,  G11C2213/15 ,  G11C2213/35 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/149

Abstract: A method for manufacturing a resistive memory element (1) comprises: providing a storage layer (2) comprising a resistance changeable material; said resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the storage layer (2), wherein the storage layer (2) is disposed between a bottom contact layer (3) and a top contact layer (4); and doping the resistance changeable material with a dopant material. A resistive memory element (1) includes a bottom contact layer (3), a top contact layer (4) and a storage layer (2) disposed between the bottom contact layer (3) and the top contact layer (4), wherein the storage layer (2) comprises a resistance changeable material that is doped with a dopant material.

Abstract translation: 一种用于制造电阻式存储元件（1）的方法，包括：提供包括电阻可变材料的存储层（2）; 所述电阻变化材料包含碳; 提供用于接触所述存储层（2）的接触层（3,4），其中所述存储层（2）设置在底部接触层（3）和顶部接触层（4）之间; 并用掺杂剂材料掺杂电阻可变材料。 电阻式存储器元件（1）包括底部接触层（3），顶部接触层（4）和设置在底部接触层（3）和顶部接触层（4）之间的存储层（2），其中 存储层（2）包括掺杂有掺杂剂材料的电阻可变材料。

公开(公告)号：GB2495452A

公开(公告)日：2013-04-10

申请号：GB201301220

申请日：2011-06-24

Applicant: IBM

Inventor： CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE ,  SEBASTIAN ABU

IPC: H01L45/00

Abstract: Disclosed is a method for manufacturing a resistive memory element (1) which comprises: providing a storage layer (2) comprising a resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the storage layer (2), wherein the storage layer (2) is disposed between a bottom contact layer (3) and a top contact layer (4); and doping the resistance changeable material with a dopant material, preferably hydrogen, nitrogen or a transition metal, and/or annealing the material. A corresponding resistive memory element (1) includes a bottom contact layer (3), a top contact layer (4) and a storage layer (2) disposed between the bottom contact layer (3) and the top contact layer (4), wherein the storage layer (2) comprises a resistance changeable material comprising carbon that is doped with a dopant material.