公开(公告)号：WO2012001599A2

公开(公告)日：2012-01-05

申请号：PCT/IB2011052790

申请日：2011-06-24

Applicant: IBM ,  CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS S ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE P ,  SEBASTIAN ABU

Inventor： CAIMI DANIELE ,  ELEFTHERIOU EVANGELOS S ,  POZIDIS CHARALAMPOS ,  ROSSEL CHRISTOPHE P ,  SEBASTIAN ABU

IPC: H01L45/00

CPC classification number: H01L45/16 ,  G11C13/0002 ,  G11C2213/15 ,  G11C2213/35 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/149

Abstract: A method for manufacturing a resistive memory element (1) comprises: providing a storage layer (2) comprising a resistance changeable material; said resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the storage layer (2), wherein the storage layer (2) is disposed between a bottom contact layer (3) and a top contact layer (4); and doping the resistance changeable material with a dopant material. A resistive memory element (1) includes a bottom contact layer (3), a top contact layer (4) and a storage layer (2) disposed between the bottom contact layer (3) and the top contact layer (4), wherein the storage layer (2) comprises a resistance changeable material that is doped with a dopant material.

Abstract translation: 一种用于制造电阻式存储元件（1）的方法，包括：提供包括电阻可变材料的存储层（2）; 所述电阻变化材料包含碳; 提供用于接触所述存储层（2）的接触层（3,4），其中所述存储层（2）设置在底部接触层（3）和顶部接触层（4）之间; 并用掺杂剂材料掺杂电阻可变材料。 电阻式存储器元件（1）包括底部接触层（3），顶部接触层（4）和设置在底部接触层（3）和顶部接触层（4）之间的存储层（2），其中 存储层（2）包括掺杂有掺杂剂材料的电阻可变材料。

公开(公告)号：AU1887000A

公开(公告)日：2000-09-04

申请号：AU1887000

申请日：2000-01-17

Applicant: IBM

Inventor： BECK ARMIN ,  BEDNORZ JOHANNES G ,  GERBER CHRISTOPH ,  ROSSEL CHRISTOPHE P

IPC: G11C11/22 ,  G11C11/56 ,  G11C13/00 ,  H01L27/24 ,  H01L29/51 ,  H01L45/00 ,  H01L27/115 ,  C04B35/46

Abstract: A microelectronic device is designed such that it includes a region between electrodes having a switchable ohmic resistance wherein the region is made of a substance comprising components Ax, By, and oxygen Oz. The ohmic resistance in the region is reversibly switchable between different states by applying different voltage pulses. The different voltage pulses lead to the respective different states. An appropriate amount of dopant(s) in the substance improves the switching, whereby the microelectronic device becomes controllable and reliable.

公开(公告)号：AU6718500A

公开(公告)日：2001-04-17

申请号：AU6718500

申请日：2000-09-06

Applicant: IBM ,  PHYSIK INST

Inventor： BLOCHL PETER ,  ROSSEL CHRISTOPHE P ,  WILLEMIN MICHEL

IPC: G01B7/00 ,  B81B3/00 ,  G01B7/14 ,  G01B7/34 ,  G01D5/14 ,  G01N27/00 ,  G01Q20/00 ,  G01R33/06 ,  G11B9/00 ,  G11B21/21 ,  G12B21/08 ,  G12B21/04

Abstract: A magnetic sensing unit for measuring displacements on a nanometer scale is provided. A moveable part and a fixed part of a microdevice magnetic sensing unit comprises a magnetic element having a magnetic field and a magnetic sensor, the magnetic element being located on the moveable part and the magnetic sensor on the fixed part, or alternatively, the magnetic sensor being located on the moveable part and the magnetic element on the fixed part. The magnetic sensor and/or the magnetic element comprise an integral part of the microdevice. The magnetic element and the magnetic sensor are arranged relative to each other such that when the moveable part is displaced the change of the magnetic field at the magnetic sensor is detectable by use of the magnetic sensor.