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公开(公告)号：JP2005311356A
公开(公告)日：2005-11-04
申请号：JP2005108749
申请日：2005-04-05
Applicant: Internatl Business Mach Corp
, インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation Inventor： ALLENSPACH ROLF , BEDNORZ JOHANNES G , MEIJER GERHARD INGMAR , LAM CHUNG HON , STUTZ RICHARD , WIDMER DANIEL
IPC: C23C16/40 , G11C11/56 , H01L21/02 , H01L21/20 , H01L21/316 , H01L21/8238 , H01L21/8246 , H01L27/10 , H01L45/00
CPC classification number: G11C13/0007 , G11C2213/31 , H01L21/31691 , H01L27/101 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625
Abstract: PROBLEM TO BE SOLVED: To provide a deposition method for a non-volatile resistance switching memory.
SOLUTION: The method for depositing a switching material can be switched between persistent conductive states. The microelectronic device is a non-volatile resistance switching memory comprising the switching material for storing digital information. The method comprises a step of depositing the switching material by a standard CMOS deposition technique at a temperature lower than 400°C.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供一种用于非易失性电阻切换存储器的沉积方法。 解决方案：用于沉积切换材料的方法可以在持续导电状态之间切换。 微电子器件是包括用于存储数字信息的开关材料的非易失性电阻切换存储器。 该方法包括通过标准CMOS沉积技术在低于400℃的温度下沉积开关材料的步骤。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：CA2058780A1
公开(公告)日：1992-07-08
申请号：CA2058780
申请日：1992-01-06
Applicant: IBM
Inventor： BEDNORZ JOHANNES G , MANNHART JOCHEN D , MUELLER CARL A
Abstract: SZ9-90-015 SUPERCONDUCTING FIELD-EFFECT TRANSISTORS WITH INVERTED MISFET STRUCTURE AND METHOD FOR MAKING THE SAME This field-effect transistor comprises a conductive substrate serving as the gate electrode, an insulating barrier layer, and a superconducting channel layer on top of the barrier layer. The superconductor layer carries a pair of mutually spaced electrodes forming source and drain, respectively. The substrate is provided with an appropriate gate contact. The substrate consists of a material belonging to the same crystallographic family as the barrier layer. In a preferred embodiment, the substrate is niobium-doped strontium titanate, the barrier layer is undoped strontium titanate, and the superconductor is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate and barrier layers. A preferred material of this type is YBa2Cu3O7-.delta., where O ? .delta. ? 0.5.
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Patent Agency Ranking
公开(公告)号：CA1236592A
公开(公告)日：1988-05-10
申请号：CA495484
申请日：1985-11-15
Applicant: IBM
Inventor： BEDNORZ JOHANNES G , GIMZEWSKI JAMES K , REIHL BRUNO
IPC: H01J37/28 , H01J37/073 , H01J37/256 , G01N23/227
Abstract: Field-Emission Scanning Auger Electron Microscope The Auger electron microscope is equipped with a field-emission tip (10) maintained at an essentially constant distance above the surface of the specimen (7). The tip (10) may consist of a tungsten (100) whisker having a radius of ~50 nm at the apex, the working distance being on the order of 1mm. Auger electrons emitted from the surface of the specimen (7) are collected by an electron energy analyzer (11) for conventional processing. Mutual scanning displacement between tip (10) and specimen (7) is obtained by an xyz-drive module (6) which is also responsible for adjusting the working distance of the tip (10). The entire microscope set-up is mounted on vibration damping means (4, 5) and may be inserted into a vacuum system by means of an appropriate flange (1), if need be.
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公开(公告)号：PL270217A1
公开(公告)日：1988-10-13
申请号：PL27021788
申请日：1988-01-20
Applicant: IBM
Inventor： BEDNORZ JOHANNES G , MULLER CARL A , TAKASHIGE MASSAKI
Abstract: The superconductive compounds are oxides of the general formula RE2-xAExTM.O4-y , wherein RE is a rare earth, AE is a member of the group of alkaline earths or a combination of at least two member of that group, and TM is a transition metal, and wherein x
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公开(公告)号：AU1887000A
公开(公告)日：2000-09-04
申请号：AU1887000
申请日：2000-01-17
Applicant: IBM
Inventor： BECK ARMIN , BEDNORZ JOHANNES G , GERBER CHRISTOPH , ROSSEL CHRISTOPHE P
Abstract: A microelectronic device is designed such that it includes a region between electrodes having a switchable ohmic resistance wherein the region is made of a substance comprising components Ax, By, and oxygen Oz. The ohmic resistance in the region is reversibly switchable between different states by applying different voltage pulses. The different voltage pulses lead to the respective different states. An appropriate amount of dopant(s) in the substance improves the switching, whereby the microelectronic device becomes controllable and reliable.
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公开(公告)号：CA1249467A
公开(公告)日：1989-01-31
申请号：CA442487
申请日：1983-12-02
Applicant: IBM
Inventor： BEDNORZ JOHANNES G , DENK WINFRIED , LANZ MARTIN , POHL WOLFGANG D
IPC: G02B6/00 , G01Q80/00 , G01Q90/00 , G02B6/02 , G02B27/00 , G11B7/08 , G11B7/135 , G11B7/22 , H01S5/10 , G11B7/12 , H01S3/06
Abstract: LIGHT WAVEGUIDE WITH A SUBMICRON APERTURE, METHOD FOR MANUFACTURING THE WAVEGUIDE AND APPLICATION OF THE WAVEGUIDE IN AN OPTICAL MEMORY The light waveguide consists of an optically transparent body at one end cut to a sharp tip and polished optically flat at the other. A metallization on its surface is thick enough to be opaque. By pressing the waveguide against a rigid plate, the metallization is plastically deformed so as to expose a tiny aperture at the tip of the body through which light can pass. By carefully controlling the deformation of the metallization, the diameter of the aperture can be kept between 10 and 500 nm. The application of the aperture when incorporated in the semiconductor laser of the read/write head of an optical storage device is described.
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公开(公告)号：HUT49422A
公开(公告)日：1989-09-28
申请号：HU26388
申请日：1988-01-22
Applicant: IBM
Inventor： BEDNORZ JOHANNES G , MUELLER CARL A , TAKASHIGE MASAAKI
Abstract: The superconductive compounds are oxides of the general formula RE2-xAExTM.O4-y , wherein RE is a rare earth, AE is a member of the group of alkaline earths or a combination of at least two member of that group, and TM is a transition metal, and wherein x
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